Uniform low-to-high in composition InGaN layers grown on Si. Aseev, P., Rodriguez, P., Kumar, P., Gómez, V., Alvi, N., Mánuel, J., Morales, F., Jiménez, J., García, R., Calleja, E., & Nötzel, R. Applied Physics Express, 2013. cited By 0
Uniform low-to-high in composition InGaN layers grown on Si [link]Paper  doi  bibtex   
@ARTICLE{Aseev2013,
author={Aseev, P. and Rodriguez, P.E.D.S. and Kumar, P. and Gómez, V.J. and Alvi, N.U.H. and Mánuel, J.M. and Morales, F.M. and Jiménez, J.J. and García, R. and Calleja, E. and Nötzel, R.},
title={Uniform low-to-high in composition InGaN layers grown on Si},
journal={Applied Physics Express},
year={2013},
volume={6},
number={11},
doi={10.7567/APEX.6.115503},
art_number={115503},
note={cited By 0},
url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84887813340&partnerID=40&md5=ba1a9b2d518b6dc91a01290cfa792de1},
document_type={Article},
source={Scopus},
}

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