Raman spectroscopy of Mott insulator states in optical lattices. Blakie, P. New Journal of Physics, 2006. cited By 7
Raman spectroscopy of Mott insulator states in optical lattices [link]Paper  doi  abstract   bibtex   
We propose and analyse a Raman spectroscopy technique for probing the properties of quantum degenerate bosons in the ground band of an optical lattice. Our formalism describes excitations to higher vibrational bands and is valid for deep lattices where a tight-binding approach can be applied to describe the initial state of the system. In sufficiently deep lattices, localized states in higher vibrational bands play an important role in the system response, and shifts in resonant frequency of excitation are sensitive to the number of particles per site. We present numerical results of this formalism applied to the case of a uniform lattice deep in the Mott insulator regime. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
@ARTICLE{Blakie2006,
author={Blakie, P.B.},
title={Raman spectroscopy of Mott insulator states in optical lattices},
journal={New Journal of Physics},
year={2006},
volume={8},
doi={10.1088/1367-2630/8/8/157},
art_number={157},
note={cited By 7},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748653834&partnerID=40&md5=7f3304c14711f09385510d4722b6d65f},
affiliation={Jack Dodd Centre for Photonics and Ultra-Cold Atoms, Department of Physics, University of Otago, PO Box 56, Dunedin, New Zealand},
abstract={We propose and analyse a Raman spectroscopy technique for probing the properties of quantum degenerate bosons in the ground band of an optical lattice. Our formalism describes excitations to higher vibrational bands and is valid for deep lattices where a tight-binding approach can be applied to describe the initial state of the system. In sufficiently deep lattices, localized states in higher vibrational bands play an important role in the system response, and shifts in resonant frequency of excitation are sensitive to the number of particles per site. We present numerical results of this formalism applied to the case of a uniform lattice deep in the Mott insulator regime. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.},
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document_type={Article},
source={Scopus},
}

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