Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1). Dentel, D., Mortada, H., Derivaz, M., Bischoff, J., Denys, E., Morales, F., Herrera, M., Mánuel, J., & García, R. Acta Materialia, 60(5):1929-1936, 2012. cited By 2
Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1) [link]Paper  doi  bibtex   
@ARTICLE{Dentel20121929,
author={Dentel, D. and Mortada, H. and Derivaz, M. and Bischoff, J.-L. and Denys, E. and Morales, F.M. and Herrera, M. and Mánuel, J.M. and García, R.},
title={Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1)},
journal={Acta Materialia},
year={2012},
volume={60},
number={5},
pages={1929-1936},
doi={10.1016/j.actamat.2011.12.038},
note={cited By 2},
url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84857421532&partnerID=40&md5=6d7a16bf30096dc4c51702245dabd87f},
document_type={Article},
source={Scopus},
}

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