Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa. Hsu, L. & Nesvizhskii, A. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 62(6):1103-1109, JUN, 2001.
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The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied by resonant photoemission spectroscopy (RESPES) and X-ray absorption near-edge spectra (XANES) at the Ni L-2,L-3-edges. The RESPES spectra are explained with atomic multiplet model, and the XANES data are compared with those calculated with multiple-scattering theory. The number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and Ni3In. (C) 2001 Elsevier Science Ltd. All rights reserved.
@article{ ISI:000168343500013,
Author = {Hsu, LS and Nesvizhskii, AI},
Title = {{Experimental and theoretical study of the electronic structures of
   Ni3Al, Ni3Ga, Ni3In, and NiGa}},
Journal = {{JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS}},
Year = {{2001}},
Volume = {{62}},
Number = {{6}},
Pages = {{1103-1109}},
Month = {{JUN}},
Abstract = {{The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied
   by resonant photoemission spectroscopy (RESPES) and X-ray absorption
   near-edge spectra (XANES) at the Ni L-2,L-3-edges. The RESPES spectra
   are explained with atomic multiplet model, and the XANES data are
   compared with those calculated with multiple-scattering theory. The
   number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and
   Ni3In. (C) 2001 Elsevier Science Ltd. All rights reserved.}},
DOI = {{10.1016/S0022-3697(00)00289-4}},
ISSN = {{0022-3697}},
ResearcherID-Numbers = {{Nesvizhskii, Alexey/A-5410-2012}},
Unique-ID = {{ISI:000168343500013}},
}
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