Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO. Manyam, J.; Ton-That, C.; and Phillips, M. Journal of Applied Physics, 2020. cited By 0
Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO [link]Paper  doi  abstract   bibtex   
Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873 K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28 eV and green luminescence (GL) at 2.39 eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving Z n i and V Zn pairs. The intensity of an orange luminescence centered at 2.01 eV was unaffected by the electric field and is assigned to substitutional Li acceptors. © 2020 Author(s).
@ARTICLE{Manyam2020,
author={Manyam, J. and Ton-That, C. and Phillips, M.R.},
title={Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO},
journal={Journal of Applied Physics},
year={2020},
volume={127},
number={8},
doi={10.1063/1.5134555},
art_number={085705},
note={cited By 0},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85080911336&doi=10.1063%2f1.5134555&partnerID=40&md5=9c0b3a763c88cbadb5fc594dc80e6ab1},
affiliation={National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Pathum Thani, 12120, Thailand; School of Mathematical and Physical Sciences, University of Technology Sydney, PO Box 123, Broadway, NSW  2007, Australia},
abstract={Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873 K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28 eV and green luminescence (GL) at 2.39 eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving Z n i and V Zn pairs. The intensity of an orange luminescence centered at 2.01 eV was unaffected by the electric field and is assigned to substitutional Li acceptors. © 2020 Author(s).},
document_type={Article},
source={Scopus},
}
Downloads: 0