Modulated CN x films prepared by IBAD. Śafŕan, G; Kolitsch, A; Malhuitre, S; Trasobares, S; Kov́acs, I; Geszti, O; Menyh́ard, M; Colliex, C; and Radńoczi, G Diamond and Related Materials, 11(8):1552--1559, Research Institute for Technical Physics and Materials Science, Academy of Sciences, Konkoly-Thege út 2933, H-1121 Budapest XII, Hungary, 2002.
Modulated CN x films prepared by IBAD [link]Paper  abstract   bibtex   
CN x thin films have been prepared by ion beam assisted deposition (IBAD) varying the C-atom to N-ion ratio during deposition. The layers were studied by means of TEM and EELS investigation, ERDA and AES depth profiling. The obtained films were amorphous. The incorporation probability of N into the films was found to depend on the N/C arrival ratio. Large amount of N incorporation was found above and small amount below a N/C arrival rate of 0.3. Due to intentional change in the N/C arrival rate, modulated structures have been produced. The N concentration in the individual layers of modulated samples was found to exhibit distinct values of approximately 5 and 20 at.%. The erosion rate of the various CN x layers upon Ar + -ion bombardment depends on their N content. The relative erosion rate of the samples containing nitrogen of 20 and 5 at.% was found to be r rel = r 20%/r 5% = 1.6 (1.2 keV, 83°angle of incidence. It was determined by XTEM and EELS that the origin of the TEM image contrast marking out the individual sublayers is mainly due to density variations in the modulated structure and partly due to thickness differences of the cross sectional TEM samples as a result of Ar + ion milling of layers of various compositions. © 2002 Elsevier Science B.V. All rights reserved.
@article{ Safran2002,
  abstract = {CN x thin films have been prepared by ion beam assisted deposition (IBAD) varying the C-atom to N-ion ratio during deposition. The layers were studied by means of TEM and EELS investigation, ERDA and AES depth profiling. The obtained films were amorphous. The incorporation probability of N into the films was found to depend on the N/C arrival ratio. Large amount of N incorporation was found above and small amount below a N/C arrival rate of 0.3. Due to intentional change in the N/C arrival rate, modulated structures have been produced. The N concentration in the individual layers of modulated samples was found to exhibit distinct values of approximately 5 and 20 at.%. The erosion rate of the various CN x layers upon Ar + -ion bombardment depends on their N content. The relative erosion rate of the samples containing nitrogen of 20 and 5 at.% was found to be r rel = r 20%/r 5% = 1.6 (1.2 keV, 83°angle of incidence. It was determined by XTEM and EELS that the origin of the TEM image contrast marking out the individual sublayers is mainly due to density variations in the modulated structure and partly due to thickness differences of the cross sectional TEM samples as a result of Ar + ion milling of layers of various compositions. © 2002 Elsevier Science B.V. All rights reserved.},
  address = {Research Institute for Technical Physics and Materials Science, Academy of Sciences, Konkoly-Thege út 2933, H-1121 Budapest XII, Hungary},
  annote = {Cited By (since 1996): 4

        
Export Date: 15 January 2013

        
Source: Scopus

        
CODEN: DRMTE

        
doi: 10.1016/S0925-9635(02)00099-7

        
Language of Original Document: English

        
Correspondence Address: Ś{a}fŕ{a}n, G.; Res. Inst. Tech. Physics/Mat. Sci., Academy of Sciences, Konkoly-Thege út 29-33, Budapest XII H-1121, Hungary; email: safran@mfa.kfki.hu

        
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  author = {Ś{a}fŕ{a}n, G and Kolitsch, A and Malhuitre, S and Trasobares, S and Kov́{a}cs, I and Geszti, O and Menyh́{a}rd, M and Colliex, C and Radń{o}czi, G},
  issn = {09259635 (ISSN)},
  journal = {Diamond and Related Materials},
  keywords = {Carbon nitride,Carbon-nitride,Electron energy loss spectroscopy,Ion assisted deposition,Ion beam assisted deposition,Ion bombardment,Modulated structure,Relative erosion rates,Sputter erosion rate,Thin films,Transmission electron microscopy,Wear of materials,film},
  number = {8},
  pages = {1552--1559},
  title = {{Modulated CN x films prepared by IBAD}},
  url = {https://www.scopus.com/inward/record.url?eid=2-s2.0-0036646877&partnerID=40&md5=a9b0f29335d666881078d06503b97db8},
  volume = {11},
  year = {2002}
}
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