Antiferroelectric Nanodomains Stabilized by Chemical Disorder at Anti-phase Boundaries. Zhu, M., Xu, M., Yun, Y., Wu, L., Shafir, O., Gilgenbach, C., Martin, L. W, Grinberg, I., Spanier, J. E, & LeBeau, J. M arXiv, [cond-mat]:2403.04904, 7 March, 2024. doi abstract bibtex Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments. In this study, correlations between chemical order and the stability of the antiferroelectric phase are established at anti-phase boundaries in ȩPb2MgWO6. Using multislice ptychography, we reveal the three-dimensional nature of chemical order at the boundaries and show that they exhibit a finite width of chemical intermixing. Furthermore, regions at and adjacent to the anti-phase boundary exhibit antiferroelectric displacements in contrast to the overall paraelectric film. Combining spatial statistics and density functional theory simulations, local antiferroelectric distortions are shown to be confined to and stabilized by chemical disorder. Enabled by the three-dimensional information of multislice ptychography, these results provide insights into the interplay between chemical order and electronic properties to engineer antiferroelectric material response.
@ARTICLE{Zhu2024-rv,
title = "Antiferroelectric Nanodomains Stabilized by Chemical Disorder
at Anti-phase Boundaries",
author = "Zhu, Menglin and Xu, Michael and Yun, Yu and Wu, Liyan and
Shafir, Or and Gilgenbach, Colin and Martin, Lane W and
Grinberg, Ilya and Spanier, Jonathan E and LeBeau, James M",
journal = "arXiv",
volume = "[cond-mat]",
pages = "2403.04904",
abstract = "Antiferroelectric perovskite oxides exhibit exceptional
dielectric properties and high structural/chemical
tunability, making them promising for a wide range of
applications from high energy-density capacitors to
solid-state cooling. However, tailoring the antiferroelectric
phase stability through alloying is hampered by the complex
interplay between chemistry and the alignment of dipole
moments. In this study, correlations between chemical order
and the stability of the antiferroelectric phase are
established at anti-phase boundaries in \ce{Pb2MgWO6}. Using
multislice ptychography, we reveal the three-dimensional
nature of chemical order at the boundaries and show that they
exhibit a finite width of chemical intermixing. Furthermore,
regions at and adjacent to the anti-phase boundary exhibit
antiferroelectric displacements in contrast to the overall
paraelectric film. Combining spatial statistics and density
functional theory simulations, local antiferroelectric
distortions are shown to be confined to and stabilized by
chemical disorder. Enabled by the three-dimensional
information of multislice ptychography, these results provide
insights into the interplay between chemical order and
electronic properties to engineer antiferroelectric material
response.",
month = "7~" # mar,
year = 2024,
archivePrefix = "arXiv",
primaryClass = "cond-mat.mtrl-sci",
eprint = "2403.04904",
keywords = "LeBeau Group",
doi = "10.48550/arXiv.2403.04904"
}
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However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments. In this study, correlations between chemical order and the stability of the antiferroelectric phase are established at anti-phase boundaries in ȩPb2MgWO6. Using multislice ptychography, we reveal the three-dimensional nature of chemical order at the boundaries and show that they exhibit a finite width of chemical intermixing. Furthermore, regions at and adjacent to the anti-phase boundary exhibit antiferroelectric displacements in contrast to the overall paraelectric film. Combining spatial statistics and density functional theory simulations, local antiferroelectric distortions are shown to be confined to and stabilized by chemical disorder. Enabled by the three-dimensional information of multislice ptychography, these results provide insights into the interplay between chemical order and electronic properties to engineer antiferroelectric material response.","month":"7 March","year":"2024","archiveprefix":"arXiv","primaryclass":"cond-mat.mtrl-sci","eprint":"2403.04904","keywords":"LeBeau Group","doi":"10.48550/arXiv.2403.04904","bibtex":"@ARTICLE{Zhu2024-rv,\n title = \"Antiferroelectric Nanodomains Stabilized by Chemical Disorder\n at Anti-phase Boundaries\",\n author = \"Zhu, Menglin and Xu, Michael and Yun, Yu and Wu, Liyan and\n Shafir, Or and Gilgenbach, Colin and Martin, Lane W and\n Grinberg, Ilya and Spanier, Jonathan E and LeBeau, James M\",\n journal = \"arXiv\",\n volume = \"[cond-mat]\",\n pages = \"2403.04904\",\n abstract = \"Antiferroelectric perovskite oxides exhibit exceptional\n dielectric properties and high structural/chemical\n tunability, making them promising for a wide range of\n applications from high energy-density capacitors to\n solid-state cooling. However, tailoring the antiferroelectric\n phase stability through alloying is hampered by the complex\n interplay between chemistry and the alignment of dipole\n moments. In this study, correlations between chemical order\n and the stability of the antiferroelectric phase are\n established at anti-phase boundaries in \\ce{Pb2MgWO6}. Using\n multislice ptychography, we reveal the three-dimensional\n nature of chemical order at the boundaries and show that they\n exhibit a finite width of chemical intermixing. Furthermore,\n regions at and adjacent to the anti-phase boundary exhibit\n antiferroelectric displacements in contrast to the overall\n paraelectric film. Combining spatial statistics and density\n functional theory simulations, local antiferroelectric\n distortions are shown to be confined to and stabilized by\n chemical disorder. 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