Antiferroelectric Nanodomains Stabilized by Chemical Disorder at Anti-phase Boundaries. Zhu, M., Xu, M., Yun, Y., Wu, L., Shafir, O., Gilgenbach, C., Martin, L. W, Grinberg, I., Spanier, J. E, & LeBeau, J. M arXiv, [cond-mat]:2403.04904, 7 March, 2024.
doi  abstract   bibtex   
Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments. In this study, correlations between chemical order and the stability of the antiferroelectric phase are established at anti-phase boundaries in ȩPb2MgWO6. Using multislice ptychography, we reveal the three-dimensional nature of chemical order at the boundaries and show that they exhibit a finite width of chemical intermixing. Furthermore, regions at and adjacent to the anti-phase boundary exhibit antiferroelectric displacements in contrast to the overall paraelectric film. Combining spatial statistics and density functional theory simulations, local antiferroelectric distortions are shown to be confined to and stabilized by chemical disorder. Enabled by the three-dimensional information of multislice ptychography, these results provide insights into the interplay between chemical order and electronic properties to engineer antiferroelectric material response.
@ARTICLE{Zhu2024-rv,
  title         = "Antiferroelectric Nanodomains Stabilized by Chemical Disorder
                   at Anti-phase Boundaries",
  author        = "Zhu, Menglin and Xu, Michael and Yun, Yu and Wu, Liyan and
                   Shafir, Or and Gilgenbach, Colin and Martin, Lane W and
                   Grinberg, Ilya and Spanier, Jonathan E and LeBeau, James M",
  journal       = "arXiv",
  volume        = "[cond-mat]",
  pages         = "2403.04904",
  abstract      = "Antiferroelectric perovskite oxides exhibit exceptional
                   dielectric properties and high structural/chemical
                   tunability, making them promising for a wide range of
                   applications from high energy-density capacitors to
                   solid-state cooling. However, tailoring the antiferroelectric
                   phase stability through alloying is hampered by the complex
                   interplay between chemistry and the alignment of dipole
                   moments. In this study, correlations between chemical order
                   and the stability of the antiferroelectric phase are
                   established at anti-phase boundaries in \ce{Pb2MgWO6}. Using
                   multislice ptychography, we reveal the three-dimensional
                   nature of chemical order at the boundaries and show that they
                   exhibit a finite width of chemical intermixing. Furthermore,
                   regions at and adjacent to the anti-phase boundary exhibit
                   antiferroelectric displacements in contrast to the overall
                   paraelectric film. Combining spatial statistics and density
                   functional theory simulations, local antiferroelectric
                   distortions are shown to be confined to and stabilized by
                   chemical disorder. Enabled by the three-dimensional
                   information of multislice ptychography, these results provide
                   insights into the interplay between chemical order and
                   electronic properties to engineer antiferroelectric material
                   response.",
  month         =  "7~" # mar,
  year          =  2024,
  archivePrefix = "arXiv",
  primaryClass  = "cond-mat.mtrl-sci",
  eprint        = "2403.04904",
  keywords      = "LeBeau Group",
  doi           = "10.48550/arXiv.2403.04904"
}

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