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\n \n \n Fix it now\n

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\n  \n 2026\n \n \n (4)\n \n \n
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\n \n\n \n \n \n \n \n ADEPT: Adaptive Dynamic Early-Exit Process for Transformers.\n \n \n \n\n\n \n Yoo, S.; Malla, S.; Choi, C.; Lu, W. D; and Choi, J. H.\n\n\n \n\n\n\n arXiv preprint arXiv:2601.03700. 2026.\n \n\n\n\n
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@article{yoo2026adept,\n  title={ADEPT: Adaptive Dynamic Early-Exit Process for Transformers},\n  author={Yoo, Sangmin and Malla, Srikanth and Choi, Chiho and Lu, Wei D and Choi, Joon Hee},\n  journal={arXiv preprint arXiv:2601.03700},\n  year={2026}\n}\n\n
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\n \n\n \n \n \n \n \n Stable Neural Signal Recording Processed by Memristor-Based Reservoir Computing System.\n \n \n \n\n\n \n Kim, S.; Wu, Y.; Moore, F.; Hu, M.; Zhang, X.; Yoo, S.; Lee, E. Y.; Shen, H.; He, Y.; Liu, J.; and others\n\n\n \n\n\n\n Advanced Intelligent Systems,e202600005. 2026.\n \n\n\n\n
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@article{kim2026stable,\n  title={Stable Neural Signal Recording Processed by Memristor-Based Reservoir Computing System},\n  author={Kim, Soohyeon and Wu, Yuting and Moore, Finn and Hu, Mingtao and Zhang, Xiaoyu and Yoo, Sangmin and Lee, Eric Yeu-Jer and Shen, Hao and He, Yichun and Liu, Jia and others},\n  journal={Advanced Intelligent Systems},\n  pages={e202600005},\n  year={2026},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n PRISM: Physical Reservoir Computing Input Spectral Mapping for Chaotic Time-Series Prediction.\n \n \n \n\n\n \n Gentry, F. M; Ochs, A.; and Yoo, S.\n\n\n \n\n\n\n In IEEE International Joint Conference on Neural Networks, 2026. \n \n\n\n\n
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@inproceedings{gentry2026prism,\n  title={PRISM: Physical Reservoir Computing Input Spectral Mapping for Chaotic Time-Series Prediction},\n  author={Gentry, Forrest M and Ochs, Alex and Yoo, Sangmin},\n  booktitle={IEEE International Joint Conference on Neural Networks},\n  year={2026}\n}\n\n
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\n \n\n \n \n \n \n \n Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1-x-Based Selector-Only Memory.\n \n \n \n\n\n \n Nguyen, T. A.; Han, C.; Ghosh, D.; Chae, S.; Choi, M.; Ban, S.; Kim, M.; Yoo, S.; Lee, S. H.; and Chae, S.\n\n\n \n\n\n\n Advanced Electronic Materials,e70529. 2026.\n \n\n\n\n
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@article{nguyen2026determining,\n  title={Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1-x-Based Selector-Only Memory},\n  author={Nguyen, Tien Anh and Han, Changdeok and Ghosh, Dipannita and Chae, Suyong and Choi, Moongyu and Ban, Sanghyun and Kim, Myoungsub and Yoo, Sangmin and Lee, Seung Hwan and Chae, Sieun},\n  journal={Advanced Electronic Materials},\n  pages={e70529},\n  year={2026},\n  publisher={Wiley Online Library}\n}\n
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\n \n\n \n \n \n \n \n Semiconductor device.\n \n \n \n\n\n \n Yoo, S.; Kim, J.; Suh, B.; Jung, J.; Hwang, E.; Lee, S.; and others\n\n\n \n\n\n\n April 8 2025.\n US Patent 12,272,606\n\n\n\n
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@misc{yoo2025semiconductor,\n  title={Semiconductor device},\n  author={Yoo, Sangmin and Kim, Juyoun and Suh, Bongseok and Jung, Jooho and Hwang, Euichul and Lee, Sungmoon and others},\n  year={2025},\n  month=apr # "~8",\n  note={US Patent 12,272,606}\n}\n\n
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\n \n\n \n \n \n \n \n SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME.\n \n \n \n\n\n \n Yoo, S. M.; Kim, J. Y.; NA, H. J.; Suh, B. S.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n April 17 2025.\n US Patent App. 18/991,796\n\n\n\n
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@misc{yoo2025semiconductor,\n  title={SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME},\n  author={Yoo, Sang Min and Kim, Ju Youn and NA, Hyung Joo and Suh, Bong Seok and Jung, Joo Ho and Hwang, Eui Chul and Lee, Sung Moon},\n  year={2025},\n  month=apr # "~17",\n  note={US Patent App. 18/991,796}\n}\n\n
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\n \n\n \n \n \n \n \n TAXI: Traveling Salesman Problem Accelerator with X-bar-based Ising Macros Powered by SOT-MRAMs and Hierarchical Clustering.\n \n \n \n\n\n \n Yoo, S.; Holla, A.; Sanyal, S.; Kim, D. E.; Iacopi, F.; Biswas, D.; Myers, J.; and Roy, K.\n\n\n \n\n\n\n In Proceedings of the 62nd ACM/IEEE Design Automation Conference, pages 1–7, 2025. \n \n\n\n\n
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@inproceedings{yoo2025taxi,\n  title={TAXI: Traveling Salesman Problem Accelerator with X-bar-based Ising Macros Powered by SOT-MRAMs and Hierarchical Clustering},\n  author={Yoo, Sangmin and Holla, Amod and Sanyal, Sourav and Kim, Dong Eun and Iacopi, Francesca and Biswas, Dwaipayan and Myers, James and Roy, Kaushik},\n  booktitle={Proceedings of the 62nd ACM/IEEE Design Automation Conference},\n  pages={1--7},\n  year={2025}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device.\n \n \n \n\n\n \n Yoo, S.; Kim, J.; Suh, B.; Jung, J.; Hwang, E.; Lee, S.; and others\n\n\n \n\n\n\n July 17 2025.\n US Patent App. 19/069,677\n\n\n\n
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@misc{yoo2025semiconductor,\n  title={Semiconductor device},\n  author={Yoo, Sangmin and Kim, Juyoun and Suh, Bongseok and Jung, Jooho and Hwang, Euichul and Lee, Sungmoon and others},\n  year={2025},\n  month=jul # "~17",\n  publisher={Google Patents},\n  note={US Patent App. 19/069,677}\n}\n\n
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\n \n\n \n \n \n \n \n Systems and methods for controlling transformers in artificial intelligence.\n \n \n \n\n\n \n KIM, S. J.; Choi, C.; Yoo, S.; Malla, S.; and Choi, J. H.\n\n\n \n\n\n\n June 5 2025.\n US Patent App. 18/949,981\n\n\n\n
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@misc{kim2025systems,\n  title={Systems and methods for controlling transformers in artificial intelligence},\n  author={KIM, Soon Ju and Choi, Chiho and Yoo, Sangmin and Malla, Srikanth and Choi, Joon Hee},\n  year={2025},\n  month=jun # "~5",\n  publisher={Google Patents},\n  note={US Patent App. 18/949,981}\n}\n\n
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\n \n\n \n \n \n \n \n System and method for inference of ai models.\n \n \n \n\n\n \n Choi, C.; Yoo, S.; KIM, S. J.; Malla, S.; and Choi, J. H.\n\n\n \n\n\n\n May 29 2025.\n US Patent App. 18/778,909\n\n\n\n
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@misc{choi2025system,\n  title={System and method for inference of ai models},\n  author={Choi, Chiho and Yoo, Sangmin and KIM, Soon Ju and Malla, Srikanth and Choi, Joon Hee},\n  year={2025},\n  month=may # "~29",\n  publisher={Google Patents},\n  note={US Patent App. 18/778,909}\n}\n\n
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\n  \n 2024\n \n \n (5)\n \n \n
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\n \n\n \n \n \n \n \n Perspective: Entropy-stabilized oxide memristors.\n \n \n \n\n\n \n Chae, S.; Yoo, S.; Kioupakis, E.; Lu, W. D; and Heron, J. T\n\n\n \n\n\n\n Applied Physics Letters, 125(7). 2024.\n \n\n\n\n
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@article{chae2024perspective,\n  title={Perspective: Entropy-stabilized oxide memristors},\n  author={Chae, Sieun and Yoo, Sangmin and Kioupakis, Emmanouil and Lu, Wei D and Heron, John T},\n  journal={Applied Physics Letters},\n  volume={125},\n  number={7},\n  year={2024},\n  publisher={AIP Publishing}\n}\n\n
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\n \n\n \n \n \n \n \n Efficient data processing using tunable entropy-stabilized oxide memristors.\n \n \n \n\n\n \n Yoo, S.; Chae, S.; Chiang, T.; Webb, M.; Ma, T.; Paik, H.; Park, Y.; Williams, L.; Nomoto, K.; Xing, H. G; and others\n\n\n \n\n\n\n Nature Electronics, 7(6): 466–474. 2024.\n \n\n\n\n
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@article{yoo2024efficient,\n  title={Efficient data processing using tunable entropy-stabilized oxide memristors},\n  author={Yoo, Sangmin and Chae, Sieun and Chiang, Tony and Webb, Matthew and Ma, Tao and Paik, Hanjong and Park, Yongmo and Williams, Logan and Nomoto, Kazuki and Xing, Huili G and others},\n  journal={Nature Electronics},\n  volume={7},\n  number={6},\n  pages={466--474},\n  year={2024},\n  publisher={Nature Publishing Group UK London}\n}\n\n
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\n \n\n \n \n \n \n \n Thermodynamic origin of nonvolatility in resistive memory.\n \n \n \n\n\n \n Li, J.; Appachar, A.; Peczonczyk, S. L; Harrison, E. T; Ievlev, A. V; Hood, R.; Shin, D.; Yoo, S.; Roest, B.; Sun, K.; and others\n\n\n \n\n\n\n Matter, 7(11): 3970–3993. 2024.\n \n\n\n\n
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@article{li2024thermodynamic,\n  title={Thermodynamic origin of nonvolatility in resistive memory},\n  author={Li, Jingxian and Appachar, Anirudh and Peczonczyk, Sabrina L and Harrison, Elisa T and Ievlev, Anton V and Hood, Ryan and Shin, Dongjae and Yoo, Sangmin and Roest, Brianna and Sun, Kai and others},\n  journal={Matter},\n  volume={7},\n  number={11},\n  pages={3970--3993},\n  year={2024},\n  publisher={Elsevier}\n}\n\n
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\n \n\n \n \n \n \n \n RN-Net: Reservoir Nodes-Enabled Neuromorphic Vision Sensing Network.\n \n \n \n\n\n \n Yoo, S.; Lee, E. Y.; Wang, Z.; Wang, X.; and Lu, W. D\n\n\n \n\n\n\n Advanced Intelligent Systems, 6(12): 2400265. 2024.\n \n\n\n\n
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@article{yoo2024rn,\n  title={RN-Net: Reservoir Nodes-Enabled Neuromorphic Vision Sensing Network},\n  author={Yoo, Sangmnin and Lee, Eric Yeu-Jer and Wang, Ziyu and Wang, Xinxin and Lu, Wei D},\n  journal={Advanced Intelligent Systems},\n  volume={6},\n  number={12},\n  pages={2400265},\n  year={2024},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device and method for fabricating the same.\n \n \n \n\n\n \n Yoo, S. M.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n December 31 2024.\n US Patent 12,183,734\n\n\n\n
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@misc{yoo2024semiconductor,\n  title={Semiconductor device and method for fabricating the same},\n  author={Yoo, Sang Min and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Jung, Joo Ho and Hwang, Eui Chul and Lee, Sung Moon},\n  year={2024},\n  month=dec # "~31",\n  publisher={Google Patents},\n  note={US Patent 12,183,734}\n}\n\n
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\n \n\n \n \n \n \n \n PowerGAN: a machine learning approach for power side-channel attack on compute-in-memory accelerators.\n \n \n \n\n\n \n Wang, Z.; Wu, Y.; Park, Y.; Yoo, S.; Wang, X.; Eshraghian, J. K; and Lu, W. D\n\n\n \n\n\n\n Advanced Intelligent Systems, 5(12): 2300313. 2023.\n \n\n\n\n
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@article{wang2023powergan,\n  title={PowerGAN: a machine learning approach for power side-channel attack on compute-in-memory accelerators},\n  author={Wang, Ziyu and Wu, Yuting and Park, Yongmo and Yoo, Sangmin and Wang, Xinxin and Eshraghian, Jason K and Lu, Wei D},\n  journal={Advanced Intelligent Systems},\n  volume={5},\n  number={12},\n  pages={2300313},\n  year={2023},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device.\n \n \n \n\n\n \n Yoo, S.; Kim, J.; Suh, B.; Jung, J.; Hwang, E.; Lee, S.; and others\n\n\n \n\n\n\n May 23 2023.\n US Patent 11,658,075\n\n\n\n
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@misc{yoo2023semiconductor,\n  title={Semiconductor device},\n  author={Yoo, Sangmin and Kim, Juyoun and Suh, Bongseok and Jung, Jooho and Hwang, Euichul and Lee, Sungmoon and others},\n  year={2023},\n  month=may # "~23",\n  note={US Patent 11,658,075}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device and method for fabricating the same.\n \n \n \n\n\n \n Yoo, S. M.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n October 10 2023.\n US Patent 11,784,186\n\n\n\n
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@misc{yoo2023semiconductor,\n  title={Semiconductor device and method for fabricating the same},\n  author={Yoo, Sang Min and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Jung, Joo Ho and Hwang, Eui Chui and Lee, Sung Moon},\n  year={2023},\n  month=oct # "~10",\n  publisher={Google Patents},\n  note={US Patent 11,784,186}\n}\n\n
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\n  \n 2022\n \n \n (6)\n \n \n
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\n \n\n \n \n \n \n \n Spatiotemporal Spike Pattern Detection with Second-order Memristive Synapses.\n \n \n \n\n\n \n Wu, Y.; Yoo, S.; Meng, F.; and Lu, W. D\n\n\n \n\n\n\n In 2022 IEEE International Symposium on Circuits and Systems (ISCAS), pages 625–628, 2022. IEEE\n \n\n\n\n
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@inproceedings{wu2022spatiotemporal,\n  title={Spatiotemporal Spike Pattern Detection with Second-order Memristive Synapses},\n  author={Wu, Yuting and Yoo, Sangmin and Meng, Fan-Hsuan and Lu, Wei D},\n  booktitle={2022 IEEE International Symposium on Circuits and Systems (ISCAS)},\n  pages={625--628},\n  year={2022},\n  organization={IEEE}\n}\n\n
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\n \n\n \n \n \n \n \n RM-NTT: An RRAM-based compute-in-memory number theoretic transform accelerator.\n \n \n \n\n\n \n Park, Y.; Wang, Z.; Yoo, S.; and Lu, W. D\n\n\n \n\n\n\n IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 8(2): 93–101. 2022.\n \n\n\n\n
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@article{park2022rm,\n  title={RM-NTT: An RRAM-based compute-in-memory number theoretic transform accelerator},\n  author={Park, Yongmo and Wang, Ziyu and Yoo, Sangmin and Lu, Wei D},\n  journal={IEEE Journal on Exploratory Solid-State Computational Devices and Circuits},\n  volume={8},\n  number={2},\n  pages={93--101},\n  year={2022},\n  publisher={IEEE}\n}\n\n
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\n \n\n \n \n \n \n \n Columnar learning networks for multisensory spatiotemporal learning.\n \n \n \n\n\n \n Yoo, S.; Park, Y.; Wang, Z.; Wu, Y.; Medepalli, S.; Thio, W.; and Lu, W. D\n\n\n \n\n\n\n Advanced Intelligent Systems, 4(11): 2200179. 2022.\n \n\n\n\n
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@article{yoo2022columnar,\n  title={Columnar learning networks for multisensory spatiotemporal learning},\n  author={Yoo, Sangmin and Park, Yongmo and Wang, Ziyu and Wu, Yuting and Medepalli, Saaketh and Thio, Wesley and Lu, Wei D},\n  journal={Advanced Intelligent Systems},\n  volume={4},\n  number={11},\n  pages={2200179},\n  year={2022},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Tuning resistive switching behavior by controlling internal ionic dynamics for biorealistic implementation of synaptic plasticity.\n \n \n \n\n\n \n Yoo, S.; Wu, Y.; Park, Y.; and Lu, W. D\n\n\n \n\n\n\n Advanced Electronic Materials, 8(8): 2101025. 2022.\n \n\n\n\n
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@article{yoo2022tuning,\n  title={Tuning resistive switching behavior by controlling internal ionic dynamics for biorealistic implementation of synaptic plasticity},\n  author={Yoo, Sangmin and Wu, Yuting and Park, Yongmo and Lu, Wei D},\n  journal={Advanced Electronic Materials},\n  volume={8},\n  number={8},\n  pages={2101025},\n  year={2022},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Method for fabricating a semiconductor device including a gate structure with an inclined side wall.\n \n \n \n\n\n \n Hwang, E. C.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Yoo, S. M.; Jung, J. H.; and Lee, S. M.\n\n\n \n\n\n\n December 27 2022.\n US Patent 11,538,807\n\n\n\n
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@misc{hwang2022method,\n  title={Method for fabricating a semiconductor device including a gate structure with an inclined side wall},\n  author={Hwang, Eui Chul and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Yoo, Sang Min and Jung, Joo Ho and Lee, Sung Moon},\n  year={2022},\n  month=dec # "~27",\n  publisher={Google Patents},\n  note={US Patent 11,538,807}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor devices including diffusion break regions.\n \n \n \n\n\n \n Park, J. M.; Kim, J. Y.; Na, H. J.; Yoo, S. M.; and Hwang, E. C.\n\n\n \n\n\n\n July 5 2022.\n US Patent 11,380,687\n\n\n\n
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@misc{park2022semiconductor,\n  title={Semiconductor devices including diffusion break regions},\n  author={Park, Jun Mo and Kim, Ju Youn and Na, Hyung Joo and Yoo, Sang Min and Hwang, Eui Chui},\n  year={2022},\n  month=jul # "~5",\n  publisher={Google Patents},\n  note={US Patent 11,380,687}\n}\n\n
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\n  \n 2021\n \n \n (4)\n \n \n
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\n \n\n \n \n \n \n \n Semiconductor device including gate structure having device isolation film.\n \n \n \n\n\n \n Hwang, E. C.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Yoo, S. M.; Jung, J. H.; and Lee, S. M.\n\n\n \n\n\n\n May 18 2021.\n US Patent 11,011,519\n\n\n\n
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@misc{hwang2021semiconductor,\n  title={Semiconductor device including gate structure having device isolation film},\n  author={Hwang, Eui Chul and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Yoo, Sang Min and Jung, Joo Ho and Lee, Sung Moon},\n  year={2021},\n  month=may # "~18",\n  publisher={Google Patents},\n  note={US Patent 11,011,519}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device.\n \n \n \n\n\n \n Yoo, S.; Kim, J.; Suh, B.; Jung, J.; Hwang, E.; Lee, S.; and others\n\n\n \n\n\n\n July 13 2021.\n US Patent 11,062,961\n\n\n\n
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@misc{yoo2021semiconductor,\n  title={Semiconductor device},\n  author={Yoo, Sangmin and Kim, Juyoun and Suh, Bongseok and Jung, Jooho and Hwang, Euichul and Lee, Sungmoon and others},\n  year={2021},\n  month=jul # "~13",\n  note={US Patent 11,062,961}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor devices including diffusion break regions.\n \n \n \n\n\n \n Park, J. M.; Kim, J. Y.; Na, H. J.; Yoo, S. M.; and Hwang, E. C.\n\n\n \n\n\n\n February 2 2021.\n US Patent 10,910,376\n\n\n\n
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@misc{park2021semiconductor,\n  title={Semiconductor devices including diffusion break regions},\n  author={Park, Jun Mo and Kim, Ju Youn and Na, Hyung Joo and Yoo, Sang Min and Hwang, Eui Chul},\n  year={2021},\n  month=feb # "~2",\n  publisher={Google Patents},\n  note={US Patent 10,910,376}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device and method for fabricating the same.\n \n \n \n\n\n \n Yoo, S. M.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n August 24 2021.\n US Patent 11,101,269\n\n\n\n
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@misc{yoo2021semiconductor,\n  title={Semiconductor device and method for fabricating the same},\n  author={Yoo, Sang Min and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Jung, Joo Ho and Hwang, Eui Chui and Lee, Sung Moon},\n  year={2021},\n  month=aug # "~24",\n  publisher={Google Patents},\n  note={US Patent 11,101,269}\n}\n\n
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\n  \n 2020\n \n \n (5)\n \n \n
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\n \n\n \n \n \n \n \n Memory Devices: Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020).\n \n \n \n\n\n \n Li, Y.; Fuller, E. J; Sugar, J. D; Yoo, S.; Ashby, D. S; Bennett, C. H; Horton, R. D; Bartsch, M. S; Marinella, M. J; Lu, W. D; and others\n\n\n \n\n\n\n Advanced Materials, 32(45): 2070339. 2020.\n \n\n\n\n
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@article{li2020memory,\n  title={Memory Devices: Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)},\n  author={Li, Yiyang and Fuller, Elliot J and Sugar, Joshua D and Yoo, Sangmin and Ashby, David S and Bennett, Christopher H and Horton, Robert D and Bartsch, Michael S and Marinella, Matthew J and Lu, Wei D and others},\n  journal={Advanced Materials},\n  volume={32},\n  number={45},\n  pages={2070339},\n  year={2020},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Adaptive synaptic memory via lithium ion modulation in RRAM devices.\n \n \n \n\n\n \n Lin, C.; Chen, J.; Chen, P.; Chang, T.; Wu, Y.; Eshraghian, J. K; Moon, J.; Yoo, S.; Wang, Y.; Chen, W.; and others\n\n\n \n\n\n\n Small, 16(42): 2003964. 2020.\n \n\n\n\n
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@article{lin2020adaptive,\n  title={Adaptive synaptic memory via lithium ion modulation in RRAM devices},\n  author={Lin, Chih-Yang and Chen, Jia and Chen, Po-Hsun and Chang, Ting-Chang and Wu, Yuting and Eshraghian, Jason K and Moon, John and Yoo, Sangmin and Wang, Yu-Hsun and Chen, Wen-Chung and others},\n  journal={Small},\n  volume={16},\n  number={42},\n  pages={2003964},\n  year={2020},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n Filament-free bulk resistive memory enables deterministic analogue switching.\n \n \n \n\n\n \n Li, Y.; Fuller, E. J; Sugar, J. D; Yoo, S.; Ashby, D. S; Bennett, C. H; Horton, R. D; Bartsch, M. S; Marinella, M. J; Lu, W. D; and others\n\n\n \n\n\n\n Advanced Materials, 32(45): 2003984. 2020.\n \n\n\n\n
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@article{li2020filament,\n  title={Filament-free bulk resistive memory enables deterministic analogue switching},\n  author={Li, Yiyang and Fuller, Elliot J and Sugar, Joshua D and Yoo, Sangmin and Ashby, David S and Bennett, Christopher H and Horton, Robert D and Bartsch, Michael S and Marinella, Matthew J and Lu, Wei D and others},\n  journal={Advanced Materials},\n  volume={32},\n  number={45},\n  pages={2003984},\n  year={2020},\n  publisher={Wiley Online Library}\n}\n\n
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\n \n\n \n \n \n \n \n FINFETs having electrically insulating diffusion break regions therein and methods of forming same.\n \n \n \n\n\n \n Na, H. J.; Kim, J. Y.; Suh, B. S.; Yoo, S. M.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n April 28 2020.\n US Patent 10,636,793\n\n\n\n
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@misc{na2020finfets,\n  title={FINFETs having electrically insulating diffusion break regions therein and methods of forming same},\n  author={Na, Hyung Joo and Kim, Ju Youn and Suh, Bong Seok and Yoo, Sang Min and Jung, Joo Ho and Hwang, Eui Chul and Lee, Sung Moon},\n  year={2020},\n  month=apr # "~28",\n  publisher={Google Patents},\n  note={US Patent 10,636,793}\n}\n\n
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\n \n\n \n \n \n \n \n Semiconductor device and method for fabricating the same.\n \n \n \n\n\n \n Yoo, S. M.; Kim, J. Y.; Na, H. J.; Suh, B. S.; Jung, J. H.; Hwang, E. C.; and Lee, S. M.\n\n\n \n\n\n\n October 13 2020.\n US Patent 10,804,265\n\n\n\n
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@misc{yoo2020semiconductor,\n  title={Semiconductor device and method for fabricating the same},\n  author={Yoo, Sang Min and Kim, Ju Youn and Na, Hyung Joo and Suh, Bong Seok and Jung, Joo Ho and Hwang, Eui Chul and Lee, Sung Moon},\n  year={2020},\n  month=oct # "~13",\n  publisher={Google Patents},\n  note={US Patent 10,804,265}\n}\n\n
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