High-power photonic millimetre wave generation at 100 GHz using matching-circuit-integrated uni-travelling-carrier photodiodes. A. Hirata, Minotani, T., Ito, H., Hirota, Y., Ishibashi, T., Sasaki, A., & Nagatsuma, T. IEE Proceedings - Optoelectronics, 150(2):138–142, April, 2003.
High-power photonic millimetre wave generation at 100 GHz using matching-circuit-integrated uni-travelling-carrier photodiodes [link]Paper  doi  abstract   bibtex   
The design and characterisation of a millimetre wave uni-travelling-carrier photodiode with a monolithically integrated matching (impedance transform) circuit utilising a coplanerwaveguide short stub are presented. The device with the matching circuit shows about 50% higher efficiency at 100 GHz than the one without it. Thc frequcncy response was characterised through time-domain measurement by means of an electro-optic sampling techniquc. The I dB down handwidth of the device is as wide as 40 GHz, and the frequency response characteristics are in good agreement with circuit model calculations. The maximum saturation output power is 20.8 niW at 100 GHz for a bias voltage of -3 V, which is the highest output power ever generated directly from a photodiode in the W-hand.
@article{a._hirata_high-power_2003,
	title = {High-power photonic millimetre wave generation at 100 {GHz} using matching-circuit-integrated uni-travelling-carrier photodiodes},
	volume = {150},
	issn = {1350-2433, 1359-7078},
	url = {http://digital-library.theiet.org/content/journals/10.1049/ip-opt_20030384},
	doi = {10.1049/ip-opt:20030384},
	abstract = {The design and characterisation of a millimetre wave uni-travelling-carrier photodiode with a monolithically integrated matching (impedance transform) circuit utilising a coplanerwaveguide short stub are presented. The device with the matching circuit shows about 50\% higher efficiency at 100 GHz than the one without it. Thc frequcncy response was characterised through time-domain measurement by means of an electro-optic sampling techniquc. The I dB down handwidth of the device is as wide as 40 GHz, and the frequency response characteristics are in good agreement with circuit model calculations. The maximum saturation output power is 20.8 niW at 100 GHz for a bias voltage of -3 V, which is the highest output power ever generated directly from a photodiode in the W-hand.},
	language = {en},
	number = {2},
	urldate = {2018-12-01},
	journal = {IEE Proceedings - Optoelectronics},
	author = {{A. Hirata} and Minotani, T. and Ito, H. and Hirota, Y. and Ishibashi, T. and Sasaki, A. and Nagatsuma, T.},
	month = apr,
	year = {2003},
	pages = {138--142},
	file = {Hirata 등 - 2003 - High-power photonic millimetre wave generation at .pdf:D\:\\Zotero\\storage\\48PG7VMJ\\Hirata 등 - 2003 - High-power photonic millimetre wave generation at .pdf:application/pdf}
}

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