Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime. Ahmadi, E., Shivaraman, R., Wu, F., Wienecke, S., Kaun, S. W., Keller, S., Speck, J. S., & Mishra, U. K. Applied Physics Letters, February, 2014. Publisher: American Institute of Physics Inc.doi abstract bibtex The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm2/V s and 2DEG sheet charge density of 1.9 × 10 13 cm-2 was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers. © 2014 AIP Publishing LLC.
@article{ahmadi_elimination_2014,
title = {Elimination of columnar microstructure in {N}-face {InAlN}, lattice-matched to {GaN}, grown by plasma-assisted molecular beam epitaxy in the {N}-rich regime},
volume = {104},
issn = {00036951},
doi = {10.1063/1.4866435},
abstract = {The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm2/V s and 2DEG sheet charge density of 1.9 × 10 13 cm-2 was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers. © 2014 AIP Publishing LLC.},
number = {7},
journal = {Applied Physics Letters},
author = {Ahmadi, Elaheh and Shivaraman, Ravi and Wu, Feng and Wienecke, Steven and Kaun, Stephen W. and Keller, Stacia and Speck, James S. and Mishra, Umesh K.},
month = feb,
year = {2014},
note = {Publisher: American Institute of Physics Inc.},
keywords = {MBE},
}
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