Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance. Ahmed, S. Z., Tan, Y., Truesdell, D. S., Calhoun, B. H., & Ghosh, A. W. Journal of applied physics, 2018.
Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance [link]Paper  bibtex   
@article{612,
  author = {Sheikh Z. Ahmed and Yaohua Tan and Daniel S. Truesdell and Benton H. Calhoun and Avik W. Ghosh},
  title = {Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance},
  year = {2018},
  journal = {Journal of applied physics},
  url = {https://doi.org/10.1063/1.5044434}
}

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