@article{akasaki_crystal_1997,
	title = {Crystal growth and conductivity control of group {III} nitride semiconductors and their application to short wavelength light emitters},
	volume = {36},
	issn = {0021-4922},
	url = {https://iopscience.iop.org/article/10.1143/JJAP.36.5393},
	doi = {10.1143/JJAP.36.5393/XML},
	abstract = {Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN and their quantum well structures. Conductivity control of both n-type and p-type nitrides has also been achieved. These achievements have led to the commercialization of high-brightness blue, green and white light-emitting diodes and to the realization of short wavelength laser diodes and high-speed transistors based on nitrides. The performance of these devices is still progressing, but still requires advances in many areas of materials science and device fabrication.},
	number = {9 A},
	urldate = {2023-03-29},
	journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers \& Short Notes \& Review Papers},
	author = {Akasaki, Isamu and Amano, Hiroshi},
	month = sep,
	year = {1997},
	note = {Publisher: JJAP},
	pages = {5393--5408},
}

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