Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate. Alassaad, K., Vivona, M., Souliere, V., Doisneau, B., Cauwet, F., Chaussende, D., Giannazzo, F., Roccaforte, F., & Ferro, G. Ecs Journal of Solid State Science and Technology, 3(8):P285–P292, 2014. bibtex*[url=;booktitle=]
doi  bibtex   
	title = {Ge {Mediated} {Surface} {Preparation} for {Twin} {Free} 3C-{SiC} {Nucleation} and {Growth} on {Low} {Off}-{Axis} 4H-{SiC} {Substrate}},
	volume = {3},
	doi = {10.1149/2.0121408jss},
	number = {8},
	journal = {Ecs Journal of Solid State Science and Technology},
	author = {Alassaad, K. and Vivona, M. and Souliere, V. and Doisneau, B. and Cauwet, F. and Chaussende, D. and Giannazzo, F. and Roccaforte, F. and Ferro, G.},
	year = {2014},
	note = {bibtex*[url=;booktitle=]},
	pages = {P285--P292}

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