A process and temperature tolerant oscillator-based true random number generator with dynamic 0/1 bias correction. Amaki, T., Hashimoto, M., & Onoye, T. In Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian, pages 133–136, November, 2013.
doi  abstract   bibtex   
This paper presents an oscillator-based true random number generator (TRNG) that dynamically unbiases 0/1 probability. The proposed TRNG automatically adjusts the duty cycle of a fast oscillator to 50 %, and generates unbiased random numbers tolerating process variation and dynamic temperature fluctuation. A prototype chip of the proposed TRNG was fabricated with a 65 nm CMOS process. Measurement results show that the developed duty cycle monitor obtained the probability of `1' 4,100 times faster than the conventional output bit observation, or estimated the probability with 70 times higher accuracy. The proposed TRNG adjusted the probability of `1' to within 50±0.07 % in five chips in the temperature range of 0 °C to 75 °C. Consequently, the proposed TRNG passed the NIST and DIEHARD tests at 7.5 Mbps with 6,670 μm2 area.
@inproceedings{amaki_process_2013,
	title = {A process and temperature tolerant oscillator-based true random number generator with dynamic 0/1 bias correction},
	doi = {10.1109/ASSCC.2013.6691000},
	abstract = {This paper presents an oscillator-based true random number generator (TRNG) that dynamically unbiases 0/1 probability. The proposed TRNG automatically adjusts the duty cycle of a fast oscillator to 50 \%, and generates unbiased random numbers tolerating process variation and dynamic temperature fluctuation. A prototype chip of the proposed TRNG was fabricated with a 65 nm CMOS process. Measurement results show that the developed duty cycle monitor obtained the probability of `1' 4,100 times faster than the conventional output bit observation, or estimated the probability with 70 times higher accuracy. The proposed TRNG adjusted the probability of `1' to within 50±0.07 \% in five chips in the temperature range of 0 °C to 75 °C. Consequently, the proposed TRNG passed the NIST and DIEHARD tests at 7.5 Mbps with 6,670 μm2 area.},
	booktitle = {Solid-{State} {Circuits} {Conference} ({A}-{SSCC}), 2013 {IEEE} {Asian}},
	author = {Amaki, T. and Hashimoto, M. and Onoye, T.},
	month = nov,
	year = {2013},
	pages = {133--136}
}

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