The 2018 GaN power electronics roadmap

The 2018 GaN power electronics roadmap. Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M. M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J. J., Guido, L., Häberlen, O., Haynes, G., Heckel, T., Hemakumara, D., Houston, P., Hu, J., Hua, M., Huang, Q., Huang, A., Jiang, S., Kawai, H., Kinzer, D., Kuball, M., Kumar, A., Lee, K. B., Li, X., Marcon, D., März, M., McCarthy, R., Meneghesso, G., Meneghini, M., Morvan, E., Nakajima, A., Narayanan, E. M., Oliver, S., Palacios, T., Piedra, D., Plissonnier, M., Reddy, R., Sun, M., Thayne, I., Torres, A., Trivellin, N., Unni, V., Uren, M. J., Van Hove, M., Wallis, D. J., Wang, J., Xie, J., Yagi, S., Yang, S., Youtsey, C., Yu, R., Zanoni, E., Zeltner, S., & Zhang, Y. Journal of Physics D: Applied Physics, March, 2018. Publisher: Institute of Physics Publishing
doi abstract bibtex

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

@article{amano_2018_2018,
title = {The 2018 {GaN} power electronics roadmap},
volume = {51},
issn = {13616463},
doi = {10.1088/1361-6463/aaaf9d},
abstract = {Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.},
number = {16},
journal = {Journal of Physics D: Applied Physics},
author = {Amano, H. and Baines, Y. and Beam, E. and Borga, Matteo and Bouchet, T. and Chalker, Paul R. and Charles, M. and Chen, Kevin J. and Chowdhury, Nadim and Chu, Rongming and De Santi, Carlo and De Souza, Maria Merlyne and Decoutere, Stefaan and Di Cioccio, L. and Eckardt, Bernd and Egawa, Takashi and Fay, P. and Freedsman, Joseph J. and Guido, L. and Häberlen, Oliver and Haynes, Geoff and Heckel, Thomas and Hemakumara, Dilini and Houston, Peter and Hu, Jie and Hua, Mengyuan and Huang, Qingyun and Huang, Alex and Jiang, Sheng and Kawai, H. and Kinzer, Dan and Kuball, Martin and Kumar, Ashwani and Lee, Kean Boon and Li, Xu and Marcon, Denis and März, Martin and McCarthy, R. and Meneghesso, Gaudenzio and Meneghini, Matteo and Morvan, E. and Nakajima, A. and Narayanan, E. M.S. and Oliver, Stephen and Palacios, Tomás and Piedra, Daniel and Plissonnier, M. and Reddy, R. and Sun, Min and Thayne, Iain and Torres, A. and Trivellin, Nicola and Unni, V. and Uren, Michael J. and Van Hove, Marleen and Wallis, David J. and Wang, J. and Xie, J. and Yagi, S. and Yang, Shu and Youtsey, C. and Yu, Ruiyang and Zanoni, Enrico and Zeltner, Stefan and Zhang, Yuhao},
month = mar,
year = {2018},
note = {Publisher: Institute of Physics Publishing},
keywords = {GaN, GaN-on-Si, power circuits},
}

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