Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications. Ameer, Z., Monteduro, A., Rizzato, S., Caricato, A., Martino, M., Lekshmi, I., Hazarika, A., Choudhury, D., Mazzotta, E., Malitesta, C., Tasco, V., Sarma, D., & Maruccio, G. Journal of Materials Science: Materials in Electronics, 29(9):7090-7098, Springer New York LLC, 2018. cited By 4![Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
@ARTICLE{Ameer20187090,
author={Ameer, Z. and Monteduro, A.G. and Rizzato, S. and Caricato, A.P. and Martino, M. and Lekshmi, I.C. and Hazarika, A. and Choudhury, D. and Mazzotta, E. and Malitesta, C. and Tasco, V. and Sarma, D.D. and Maruccio, G.},
title={Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications},
journal={Journal of Materials Science: Materials in Electronics},
year={2018},
volume={29},
number={9},
pages={7090-7098},
doi={10.1007/s10854-018-8696-x},
note={cited By 4},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-85041621939&doi=10.1007%2fs10854-018-8696-x&partnerID=40&md5=7f9f01600a694af2bdc4380288988e40},
abstract={The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.},
publisher={Springer New York LLC},
issn={09574522},
document_type={Article},
source={Scopus},
}
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