@inProceedings{
 title = {Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance},
 type = {inProceedings},
 year = {2008},
 keywords = {AlGaAs-GaAs,Gunn diodes,III-V semiconductors,IV characteristics,SILVACO,aluminium compounds,carrier density,doping spike carrier concentration,e2v technologies,gallium arsenide,hot carriers,hot electron injector,semiconductor device models,step-graded Gunn diode},
 pages = {51-54},
 websites = {http://10.1109/ASDAM.2008.4743356},
 id = {db10c1f1-67c6-3f58-9c82-aa9523e62c25},
 created = {2016-06-15T09:38:54.000Z},
 file_attached = {true},
 profile_id = {17c08d60-426d-3744-a76f-95758e3acf1f},
 group_id = {18b7416d-8417-3a6d-b8b5-337af0d1f537},
 last_modified = {2017-03-14T17:01:27.040Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 citation_key = {Amir2008},
 source_type = {Conference Proceedings},
 folder_uuids = {20532356-b9f6-43a2-b298-43e3c4df06a2},
 abstract = {This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.},
 bibtype = {inProceedings},
 author = {Amir, F and Farrington, N and Tauqeer, T and Missous, M},
 booktitle = {IEEE International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008}
}

{"_id":"3NJsLZRZHP5xNcHSY","bibbaseid":"amir-farrington-tauqeer-missous-physicalmodellingofastepgradedalgaasgaasgunndiodeandinvestigationofhotelectroninjectorperformance-2008","downloads":0,"creationDate":"2017-08-10T11:05:20.867Z","title":"Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance","author_short":["Amir, F.","Farrington, N.","Tauqeer, T.","Missous, M."],"year":2008,"bibtype":"inProceedings","biburl":null,"bibdata":{"title":"Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance","type":"inProceedings","year":"2008","keywords":"AlGaAs-GaAs,Gunn diodes,III-V semiconductors,IV characteristics,SILVACO,aluminium compounds,carrier density,doping spike carrier concentration,e2v technologies,gallium arsenide,hot carriers,hot electron injector,semiconductor device models,step-graded Gunn diode","pages":"51-54","websites":"http://10.1109/ASDAM.2008.4743356","id":"db10c1f1-67c6-3f58-9c82-aa9523e62c25","created":"2016-06-15T09:38:54.000Z","file_attached":"true","profile_id":"17c08d60-426d-3744-a76f-95758e3acf1f","group_id":"18b7416d-8417-3a6d-b8b5-337af0d1f537","last_modified":"2017-03-14T17:01:27.040Z","read":false,"starred":false,"authored":false,"confirmed":"true","hidden":false,"citation_key":"Amir2008","source_type":"Conference Proceedings","folder_uuids":"20532356-b9f6-43a2-b298-43e3c4df06a2","abstract":"This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.","bibtype":"inProceedings","author":"Amir, F and Farrington, N and Tauqeer, T and Missous, M","booktitle":"IEEE International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008","bibtex":"@inProceedings{\n title = {Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance},\n type = {inProceedings},\n year = {2008},\n keywords = {AlGaAs-GaAs,Gunn diodes,III-V semiconductors,IV characteristics,SILVACO,aluminium compounds,carrier density,doping spike carrier concentration,e2v technologies,gallium arsenide,hot carriers,hot electron injector,semiconductor device models,step-graded Gunn diode},\n pages = {51-54},\n websites = {http://10.1109/ASDAM.2008.4743356},\n id = {db10c1f1-67c6-3f58-9c82-aa9523e62c25},\n created = {2016-06-15T09:38:54.000Z},\n file_attached = {true},\n profile_id = {17c08d60-426d-3744-a76f-95758e3acf1f},\n group_id = {18b7416d-8417-3a6d-b8b5-337af0d1f537},\n last_modified = {2017-03-14T17:01:27.040Z},\n read = {false},\n starred = {false},\n authored = {false},\n confirmed = {true},\n hidden = {false},\n citation_key = {Amir2008},\n source_type = {Conference Proceedings},\n folder_uuids = {20532356-b9f6-43a2-b298-43e3c4df06a2},\n abstract = {This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.},\n bibtype = {inProceedings},\n author = {Amir, F and Farrington, N and Tauqeer, T and Missous, M},\n booktitle = {IEEE International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008}\n}","author_short":["Amir, F.","Farrington, N.","Tauqeer, T.","Missous, M."],"urls":{"Paper":"http://bibbase.org/service/mendeley/d497bc17-a0d0-32e0-a915-fc6148eb1197/file/223a7975-90dd-4ca5-5267-bba5adc8feba/2008-Physical_Modelling_of_a_Step-Graded_AlGaAsGaAs_Gunn_Diode_and_Investigation_of_Hot_Electron_Injector_Performance.pdf.pdf","Website":"http://10.1109/ASDAM.2008.4743356"},"bibbaseid":"amir-farrington-tauqeer-missous-physicalmodellingofastepgradedalgaasgaasgunndiodeandinvestigationofhotelectroninjectorperformance-2008","role":"author","keyword":["AlGaAs-GaAs","Gunn diodes","III-V semiconductors","IV characteristics","SILVACO","aluminium compounds","carrier density","doping spike carrier concentration","e2v technologies","gallium arsenide","hot carriers","hot electron injector","semiconductor device models","step-graded Gunn diode"],"downloads":0},"search_terms":["physical","modelling","step","graded","algaas","gaas","gunn","diode","investigation","hot","electron","injector","performance","amir","farrington","tauqeer","missous"],"keywords":["algaas-gaas","gunn diodes","iii-v semiconductors","iv characteristics","silvaco","aluminium compounds","carrier density","doping spike carrier concentration","e2v technologies","gallium arsenide","hot carriers","hot electron injector","semiconductor device models","step-graded gunn diode"],"authorIDs":[]}