In IEEE International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, pages 51-54, 2008. Paper Website abstract bibtex
This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data.