10-W/mm AlGaN-GaN HFET with a field modulating plate. Ando, Y., Okamoto, Y., Miyamoto, H., Nakayama, T., Inoue, T., & Kuzuhara, M. IEEE Electron Device Letters, 24(5):289–291, May, 2003.
doi  abstract   bibtex   
AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate. The gate-drain breakdown voltage (BVgd) was significantly improved by employing an FP electrode, and the highest BVgd of 160 V was obtained with an FP length (LFP) of 1 μm. The maximum drain current achieved was 750 mA/mm, together with negligibly small current collapse. A 1-mm-wide FP-FET (LFP = 1 μm) biased at a drain voltage of 65 V demonstrated a continuous wave saturated output power of 10.3 W with a linear gain of 18.0 dB and a power-added efficiency of 47.3% at 2 GHz. To our knowledge, the power density of 10.3 W/mm is the highest ever achieved for any FET of the same gate size.
@article{ando_10-wmm_2003,
	title = {10-{W}/mm {AlGaN}-{GaN} {HFET} with a field modulating plate},
	volume = {24},
	issn = {07413106},
	doi = {10.1109/LED.2003.812532},
	abstract = {AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate. The gate-drain breakdown voltage (BVgd) was significantly improved by employing an FP electrode, and the highest BVgd of 160 V was obtained with an FP length (LFP) of 1 μm. The maximum drain current achieved was 750 mA/mm, together with negligibly small current collapse. A 1-mm-wide FP-FET (LFP = 1 μm) biased at a drain voltage of 65 V demonstrated a continuous wave saturated output power of 10.3 W with a linear gain of 18.0 dB and a power-added efficiency of 47.3\% at 2 GHz. To our knowledge, the power density of 10.3 W/mm is the highest ever achieved for any FET of the same gate size.},
	number = {5},
	journal = {IEEE Electron Device Letters},
	author = {Ando, Y. and Okamoto, Y. and Miyamoto, H. and Nakayama, T. and Inoue, T. and Kuzuhara, M.},
	month = may,
	year = {2003},
	keywords = {FET, Field modulating plate (FP), GaN, HEMTs, HFET},
	pages = {289--291},
}

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