Crystalline Nanowires of para-sexiphenyl grown by hot wall epitaxy. Andreev, A., Y., Teichert, C., Hlawacek, G., & Hoppe, H. In Mikroelectronik 2003, pages 1-6, 2003.
Crystalline Nanowires of para-sexiphenyl grown by hot wall epitaxy [pdf]Paper  Crystalline Nanowires of para-sexiphenyl grown by hot wall epitaxy [pdf]Website  abstract   bibtex   
In this work we use atomic force microscopy to study the early growth stages of para- sexiphenyl films grown on mica by Hot Wall Epitaxy. It is shown that self-organization of the molecules occurs during the growth controlled mainly by the substrate temperature and deposition time. X-ray diffraction measurements were also performed using synchrotron radiation. These measurements confirmed a very high crystalline quality of the grown films.

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