Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films. Angerer, H., Brunner, D., Freudenberg, F., Ambacher, O., Stutzmann, M., Höpler, R., Metzger, T., Born, E., Dollinger, G., Bergmaier, A., Karsch, S., & Körner, H. J. Applied Physics Letters, 71(11):1504–1506, September, 1997. Publisher: American Institute of Physics Inc.doi abstract bibtex AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV. © 1997 American Institute of Physics.
@article{angerer_determination_1997,
title = {Determination of the {Al} mole fraction and the band gap bowing of epitaxial {AlxGa1}-{xN} films},
volume = {71},
issn = {00036951},
doi = {10.1063/1.119949},
abstract = {AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV. © 1997 American Institute of Physics.},
number = {11},
journal = {Applied Physics Letters},
author = {Angerer, H. and Brunner, D. and Freudenberg, F. and Ambacher, O. and Stutzmann, M. and Höpler, R. and Metzger, T. and Born, E. and Dollinger, G. and Bergmaier, A. and Karsch, S. and Körner, H. J.},
month = sep,
year = {1997},
note = {Publisher: American Institute of Physics Inc.},
pages = {1504--1506},
}
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This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. 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