Electron paramagnetic resonance in transition metal-doped ZnO nanowires. Ankiewicz, A. O., Carmo, M. C., Sobolev, N. A., Gehlhoff, W., Kaidashev, E. M., Rahm, A., Lorenz, M., & Grundmann, M. Journal of Applied Physics, 101(2):024324, January, 2007. ![Electron paramagnetic resonance in transition metal-doped ZnO nanowires [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex The wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure pulsed laser deposition. The samples were characterized by scanning electron microscopy (SEM) and electron paramagnetic resonance (EPR) in the X-band (≃9.3 GHz) from T=4 to 300 K. According to the SEM pictures, the nanowires exhibit a length of about 1 μm and are aligned perpendicular to the substrate surface. The structures have a hexagonal cross section and their diameter ranges from 60 nm up to 150 nm. For the lowest nominal concentrations of xMn=3 at. % and xCo=5 at. %, we detect the anisotropic EPR spectra of isolated Mn2+ (3d5, S6) and Co2+ (3d7, F4), respectively, on Zn sites. The detection of the well-resolved anisotropic spectra proves a coherent crystallographic orientation of the nanowires. The linewidth was larger than the best values reported in the literature. Nevertheless, it was possible to identify two different components, A and B, of the reported spectra. From the temperature dependence of the EPR intensity, we found that both components exhibit paramagnetic behavior and are present in a concentration ratio of NB∕NA=1.4. In the case of the Mn-doped ZnO wires, the linewidth increases with increasing Mn concentration due to the dipole-dipole interaction of the paramagnetic ions. At the highest used nominal concentration, xMn=10 at. %, an additional broad single line is observed.
@article{ankiewicz_electron_2007,
title = {Electron paramagnetic resonance in transition metal-doped {ZnO} nanowires},
volume = {101},
issn = {0021-8979},
url = {https://doi.org/10.1063/1.2402095},
doi = {10.1063/1.2402095},
abstract = {The wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure pulsed laser deposition. The samples were characterized by scanning electron microscopy (SEM) and electron paramagnetic resonance (EPR) in the X-band (≃9.3 GHz) from T=4 to 300 K. According to the SEM pictures, the nanowires exhibit a length of about 1 μm and are aligned perpendicular to the substrate surface. The structures have a hexagonal cross section and their diameter ranges from 60 nm up to 150 nm. For the lowest nominal concentrations of xMn=3 at. \% and xCo=5 at. \%, we detect the anisotropic EPR spectra of isolated Mn2+ (3d5, S6) and Co2+ (3d7, F4), respectively, on Zn sites. The detection of the well-resolved anisotropic spectra proves a coherent crystallographic orientation of the nanowires. The linewidth was larger than the best values reported in the literature. Nevertheless, it was possible to identify two different components, A and B, of the reported spectra. From the temperature dependence of the EPR intensity, we found that both components exhibit paramagnetic behavior and are present in a concentration ratio of NB∕NA=1.4. In the case of the Mn-doped ZnO wires, the linewidth increases with increasing Mn concentration due to the dipole-dipole interaction of the paramagnetic ions. At the highest used nominal concentration, xMn=10 at. \%, an additional broad single line is observed.},
language = {en},
number = {2},
urldate = {2023-11-11},
journal = {Journal of Applied Physics},
author = {Ankiewicz, A. O. and Carmo, M. C. and Sobolev, N. A. and Gehlhoff, W. and Kaidashev, E. M. and Rahm, A. and Lorenz, M. and Grundmann, M.},
month = jan,
year = {2007},
pages = {024324},
}
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The samples were characterized by scanning electron microscopy (SEM) and electron paramagnetic resonance (EPR) in the X-band (≃9.3 GHz) from T=4 to 300 K. According to the SEM pictures, the nanowires exhibit a length of about 1 μm and are aligned perpendicular to the substrate surface. The structures have a hexagonal cross section and their diameter ranges from 60 nm up to 150 nm. For the lowest nominal concentrations of xMn=3 at. % and xCo=5 at. %, we detect the anisotropic EPR spectra of isolated Mn2+ (3d5, S6) and Co2+ (3d7, F4), respectively, on Zn sites. The detection of the well-resolved anisotropic spectra proves a coherent crystallographic orientation of the nanowires. The linewidth was larger than the best values reported in the literature. Nevertheless, it was possible to identify two different components, A and B, of the reported spectra. From the temperature dependence of the EPR intensity, we found that both components exhibit paramagnetic behavior and are present in a concentration ratio of NB∕NA=1.4. In the case of the Mn-doped ZnO wires, the linewidth increases with increasing Mn concentration due to the dipole-dipole interaction of the paramagnetic ions. At the highest used nominal concentration, xMn=10 at. %, an additional broad single line is observed.","language":"en","number":"2","urldate":"2023-11-11","journal":"Journal of Applied Physics","author":[{"propositions":[],"lastnames":["Ankiewicz"],"firstnames":["A.","O."],"suffixes":[]},{"propositions":[],"lastnames":["Carmo"],"firstnames":["M.","C."],"suffixes":[]},{"propositions":[],"lastnames":["Sobolev"],"firstnames":["N.","A."],"suffixes":[]},{"propositions":[],"lastnames":["Gehlhoff"],"firstnames":["W."],"suffixes":[]},{"propositions":[],"lastnames":["Kaidashev"],"firstnames":["E.","M."],"suffixes":[]},{"propositions":[],"lastnames":["Rahm"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Lorenz"],"firstnames":["M."],"suffixes":[]},{"propositions":[],"lastnames":["Grundmann"],"firstnames":["M."],"suffixes":[]}],"month":"January","year":"2007","pages":"024324","bibtex":"@article{ankiewicz_electron_2007,\n\ttitle = {Electron paramagnetic resonance in transition metal-doped {ZnO} nanowires},\n\tvolume = {101},\n\tissn = {0021-8979},\n\turl = {https://doi.org/10.1063/1.2402095},\n\tdoi = {10.1063/1.2402095},\n\tabstract = {The wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. 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