@article{tapajna_integrated_2010,
	title = {Integrated optical and electrical analysis: {Identifying} location and properties of traps in {AlGaN}/{GaN} {HEMTs} during electrical stress},
	volume = {31},
	issn = {07413106},
	doi = {10.1109/LED.2010.2047092},
	abstract = {A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off-state stress increases irreversibly the number of traps located in the near-surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices changes its nature to interacting defect after the off-state stress, accompanied by an activation energy change. These results are consistent with trap generation in the near-surface AlGaN region at the gate edge related to high electric field and gate leakage current, as stressing does not result in the generation of cracks in the AlGaN layer. © 2010 IEEE.},
	number = {7},
	journal = {IEEE Electron Device Letters},
	author = {Ťapajna, Milan and Simms, Richard J.T. and Pei, Yi and Mishra, Umesh K. and Kuball, Martin},
	month = jul,
	year = {2010},
	keywords = {Electrical stress, GaN high-electron mobility transistor (HEMT), HEMTs, MBE, electroluminescence (EL), impurity diffusion, trapping},
	pages = {662--664},
}

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