@article{ ISI:000429798300089,
Author = {Ardchongtong, Pornpanarat and Kumlangwan, Pantiwa and Towannang,
   Madsakorn and Suksangrat, Pitphichaya and Srepusharawoot, Pornjuk and
   Prachumrak, Narid and Klangtakai, Pawinee and Pimanpang, Samuk and
   Promarak, Vinich and Amornkitbamrung, Vittaya},
Title = {{Room temperature preparation of delta-phase CsSn1-xPbxI3 films for
   hole-transport in solid-state dye-sensitized solar cells}},
Journal = {{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}},
Year = {{2018}},
Volume = {{29}},
Number = {{9}},
Pages = {{7811-7819}},
Month = {{MAY}},
Abstract = {{CsSn1-xPbxI3 films were prepared from mixed CsI, SnI2 and/or PbI2
   solutions at five different Pb/Sn ratios (x = 0, 0.2, 0.5, 0.8 and 1) at
   room temperature. The color of the CsSn1-xPbxI3 films varied with their
   Pb/Sn ratios. At a Pb/Sn ratio of 0.5, CsSn0.5Pb0.5I3 had the darkest
   color, whereas films at other Pb/Sn ratios displayed dark brown or
   yellowish colors. The XRD spectra of the as-prepared CsSn1-xPbxI3 films
   matched the delta-phase (yellow-phase) nonperovskite structure quite
   well. Solid-state dye-sensitized solar cells (S-DSSCs) were assembled by
   directly dropping the mixed CsI, SnI2 and/or PbI2 solution onto
   TiO2-coated-dye electrodes and drying them at room temperature. A
   CsSn0.5Pb0.5I3 based S-DSSC generated the highest efficiency (3.47\%) of
   the five conditions (CsSn1-xPbxI3, x = 0, 0.2, 0.5, 0.8 and 1). This is
   attributed to the dark color and good continuity of the CsSn0.5Pb0.5I3
   film, its high shunt-resistance (10,377.10 a{''}broken vertical bar) and
   high incident-photon collecting efficiency of CsSn0.5Pb0.5I3 based
   S-DSSCs.}},
DOI = {{10.1007/s10854-018-8780-2}},
ISSN = {{0957-4522}},
EISSN = {{1573-482X}},
Unique-ID = {{ISI:000429798300089}},
}

{"_id":"EymbKKKNwbtPyiQ6J","bibbaseid":"ardchongtong-kumlangwan-towannang-suksangrat-srepusharawoot-prachumrak-klangtakai-pimanpang-etal-roomtemperaturepreparationofdeltaphasecssn1xpbxi3filmsforholetransportinsolidstatedyesensitizedsolarcells-2018","authorIDs":[],"author_short":["Ardchongtong, P.","Kumlangwan, P.","Towannang, M.","Suksangrat, P.","Srepusharawoot, P.","Prachumrak, N.","Klangtakai, P.","Pimanpang, S.","Promarak, V.","Amornkitbamrung, V."],"bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Ardchongtong"],"firstnames":["Pornpanarat"],"suffixes":[]},{"propositions":[],"lastnames":["Kumlangwan"],"firstnames":["Pantiwa"],"suffixes":[]},{"propositions":[],"lastnames":["Towannang"],"firstnames":["Madsakorn"],"suffixes":[]},{"propositions":[],"lastnames":["Suksangrat"],"firstnames":["Pitphichaya"],"suffixes":[]},{"propositions":[],"lastnames":["Srepusharawoot"],"firstnames":["Pornjuk"],"suffixes":[]},{"propositions":[],"lastnames":["Prachumrak"],"firstnames":["Narid"],"suffixes":[]},{"propositions":[],"lastnames":["Klangtakai"],"firstnames":["Pawinee"],"suffixes":[]},{"propositions":[],"lastnames":["Pimanpang"],"firstnames":["Samuk"],"suffixes":[]},{"propositions":[],"lastnames":["Promarak"],"firstnames":["Vinich"],"suffixes":[]},{"propositions":[],"lastnames":["Amornkitbamrung"],"firstnames":["Vittaya"],"suffixes":[]}],"title":"Room temperature preparation of delta-phase CsSn1-xPbxI3 films for hole-transport in solid-state dye-sensitized solar cells","journal":"JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS","year":"2018","volume":"29","number":"9","pages":"7811-7819","month":"MAY","abstract":"CsSn1-xPbxI3 films were prepared from mixed CsI, SnI2 and/or PbI2 solutions at five different Pb/Sn ratios (x = 0, 0.2, 0.5, 0.8 and 1) at room temperature. The color of the CsSn1-xPbxI3 films varied with their Pb/Sn ratios. At a Pb/Sn ratio of 0.5, CsSn0.5Pb0.5I3 had the darkest color, whereas films at other Pb/Sn ratios displayed dark brown or yellowish colors. The XRD spectra of the as-prepared CsSn1-xPbxI3 films matched the delta-phase (yellow-phase) nonperovskite structure quite well. Solid-state dye-sensitized solar cells (S-DSSCs) were assembled by directly dropping the mixed CsI, SnI2 and/or PbI2 solution onto TiO2-coated-dye electrodes and drying them at room temperature. A CsSn0.5Pb0.5I3 based S-DSSC generated the highest efficiency (3.47%) of the five conditions (CsSn1-xPbxI3, x = 0, 0.2, 0.5, 0.8 and 1). This is attributed to the dark color and good continuity of the CsSn0.5Pb0.5I3 film, its high shunt-resistance (10,377.10 a''broken vertical bar) and high incident-photon collecting efficiency of CsSn0.5Pb0.5I3 based S-DSSCs.","doi":"10.1007/s10854-018-8780-2","issn":"0957-4522","eissn":"1573-482X","unique-id":"ISI:000429798300089","bibtex":"@article{ ISI:000429798300089,\nAuthor = {Ardchongtong, Pornpanarat and Kumlangwan, Pantiwa and Towannang,\n Madsakorn and Suksangrat, Pitphichaya and Srepusharawoot, Pornjuk and\n Prachumrak, Narid and Klangtakai, Pawinee and Pimanpang, Samuk and\n Promarak, Vinich and Amornkitbamrung, Vittaya},\nTitle = {{Room temperature preparation of delta-phase CsSn1-xPbxI3 films for\n hole-transport in solid-state dye-sensitized solar cells}},\nJournal = {{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}},\nYear = {{2018}},\nVolume = {{29}},\nNumber = {{9}},\nPages = {{7811-7819}},\nMonth = {{MAY}},\nAbstract = {{CsSn1-xPbxI3 films were prepared from mixed CsI, SnI2 and/or PbI2\n solutions at five different Pb/Sn ratios (x = 0, 0.2, 0.5, 0.8 and 1) at\n room temperature. The color of the CsSn1-xPbxI3 films varied with their\n Pb/Sn ratios. At a Pb/Sn ratio of 0.5, CsSn0.5Pb0.5I3 had the darkest\n color, whereas films at other Pb/Sn ratios displayed dark brown or\n yellowish colors. The XRD spectra of the as-prepared CsSn1-xPbxI3 films\n matched the delta-phase (yellow-phase) nonperovskite structure quite\n well. Solid-state dye-sensitized solar cells (S-DSSCs) were assembled by\n directly dropping the mixed CsI, SnI2 and/or PbI2 solution onto\n TiO2-coated-dye electrodes and drying them at room temperature. A\n CsSn0.5Pb0.5I3 based S-DSSC generated the highest efficiency (3.47\\%) of\n the five conditions (CsSn1-xPbxI3, x = 0, 0.2, 0.5, 0.8 and 1). This is\n attributed to the dark color and good continuity of the CsSn0.5Pb0.5I3\n film, its high shunt-resistance (10,377.10 a{''}broken vertical bar) and\n high incident-photon collecting efficiency of CsSn0.5Pb0.5I3 based\n S-DSSCs.}},\nDOI = {{10.1007/s10854-018-8780-2}},\nISSN = {{0957-4522}},\nEISSN = {{1573-482X}},\nUnique-ID = {{ISI:000429798300089}},\n}\n\n","author_short":["Ardchongtong, P.","Kumlangwan, P.","Towannang, M.","Suksangrat, P.","Srepusharawoot, P.","Prachumrak, N.","Klangtakai, P.","Pimanpang, S.","Promarak, V.","Amornkitbamrung, V."],"key":"ISI:000429798300089","id":"ISI:000429798300089","bibbaseid":"ardchongtong-kumlangwan-towannang-suksangrat-srepusharawoot-prachumrak-klangtakai-pimanpang-etal-roomtemperaturepreparationofdeltaphasecssn1xpbxi3filmsforholetransportinsolidstatedyesensitizedsolarcells-2018","role":"author","urls":{},"downloads":0},"bibtype":"article","biburl":"http://nanotec.cnr.it/data/nanotec/nanotec-full.bib","creationDate":"2020-04-21T16:04:30.348Z","downloads":0,"keywords":[],"search_terms":["room","temperature","preparation","delta","phase","cssn1","xpbxi3","films","hole","transport","solid","state","dye","sensitized","solar","cells","ardchongtong","kumlangwan","towannang","suksangrat","srepusharawoot","prachumrak","klangtakai","pimanpang","promarak","amornkitbamrung"],"title":"Room temperature preparation of delta-phase CsSn1-xPbxI3 films for hole-transport in solid-state dye-sensitized solar cells","year":2018,"dataSources":["ZTEbWc6bW5f9DTsjF"]}