Ultra long and Defect-Free GaN Nanowires Grown by the HVPE Process. Avit, G., Lekhal, K., Andre, Y., Bougerol, C., Reveret, F., Leymarie, J., Gil, E., Monier, G., Castelluci, D., & Trassoudaine, A. Nano Letters, 14(2):559–562, February, 2014. WOS:000331343900025
doi  abstract   bibtex   
GaN nanowires with exceptional lengths are synthesized by vapor-liquid-solid coupled with near-equilibrium hydride vapor phase epitaxy technique on c-plane sapphire substrates. Because of the high decomposition frequency of GaCl precursors and a direct supply of Ga through the catalyst particle, the growth of GaN nanowires with constant diameters takes place at an exceptional growth rate of 130 mu m/h. The chemical composition of the catalyst droplet is analyzed by energy dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and selective area diffraction show that the GaN nanowires crystallize in the hexagonal wurzite structure and are defect-free. GaN nanowires exhibit bare top facets without any droplet. Microphotoluminescence displays a narrow and intense (1 meV line width) associated to the neutral-donor bound exciton revealing excellent optical properties of GaN
@article{avit_ultra_2014,
	title = {Ultra long and {Defect}-{Free} {GaN} {Nanowires} {Grown} by the {HVPE} {Process}},
	volume = {14},
	issn = {1530-6984},
	doi = {10.1021/nl403687h},
	abstract = {GaN nanowires with exceptional lengths are synthesized by vapor-liquid-solid coupled with near-equilibrium hydride vapor phase epitaxy technique on c-plane sapphire substrates. Because of the high decomposition frequency of GaCl precursors and a direct supply of Ga through the catalyst particle, the growth of GaN nanowires with constant diameters takes place at an exceptional growth rate of 130 mu m/h. The chemical composition of the catalyst droplet is analyzed by energy dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and selective area diffraction show that the GaN nanowires crystallize in the hexagonal wurzite structure and are defect-free. GaN nanowires exhibit bare top facets without any droplet. Microphotoluminescence displays a narrow and intense (1 meV line width) associated to the neutral-donor bound exciton revealing excellent optical properties of GaN},
	language = {English},
	number = {2},
	journal = {Nano Letters},
	author = {Avit, Geoffrey and Lekhal, Kaddour and Andre, Yamina and Bougerol, Catherine and Reveret, Francois and Leymarie, Joel and Gil, Evelyne and Monier, Guillaume and Castelluci, Dominique and Trassoudaine, Agnes},
	month = feb,
	year = {2014},
	note = {WOS:000331343900025},
	keywords = {VLS photoluminescence, catalyst-free, diodes, edx, gan, hvpe, mobility, molecular-beam epitaxy, nanowires, silicon, vapor-phase epitaxy},
	pages = {559--562},
}

Downloads: 0