@article{ ISI:000355631400027,
Author = {Bal, V. V. and Mehta, M. M. and Ryu, S. and Lee, H. and Folkman, C. M.
   and Eom, C. B. and Chandrasekhar, V.},
Title = {{Gate-tunable superconducting weak link behavior in top-gated
   LaAlO3-SrTiO3}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2015}},
Volume = {{106}},
Number = {{21}},
Month = {{MAY 25}},
Abstract = {{We use a combination of global back-gating and local top-gating to
   define nanoscale devices in the two-dimensional electron gas at the
   LaAlO3-SrTiO3 interface, demonstrating an efficient way for much finer
   spatial control over the properties of the interface, as compared to
   back-gating alone. The devices show indications of an inhomogenous
   superconducting weak link. The variation of critical current with
   perpendicular magnetic field shows evidence of oscillations, which hints
   at Josephson coupling. The variation of the critical current and zero
   bias resistance with temperature is consistent with short, overdamped
   weak links. We show that the applied top-gate voltage provides a strong
   handle on the properties of these weak links. This technique can be an
   important tool to define a variety of device structures in this system,
   allowing us to probe the nature of superconductivity in the
   LaAlO3-SrTiO3 interface system in different ways. (C) 2015 AIP
   Publishing LLC.}},
DOI = {{10.1063/1.4921924}},
Article-Number = {{212601}},
ISSN = {{0003-6951}},
EISSN = {{1077-3118}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000355631400027}},
}

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