True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices. Balatti, S., Ambrogio, S., Wang, Z., & Ielmini, D. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 5(2):214–221, June, 2015.
doi  abstract   bibtex   
Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.
@article{balatti_true_2015,
	title = {True {Random} {Number} {Generation} by {Variability} of {Resistive} {Switching} in {Oxide}-{Based} {Devices}},
	volume = {5},
	issn = {2156-3357},
	doi = {10.1109/JETCAS.2015.2426492},
	abstract = {Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50\% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.},
	number = {2},
	journal = {IEEE Journal on Emerging and Selected Topics in Circuits and Systems},
	author = {Balatti, S. and Ambrogio, S. and Wang, Z. and Ielmini, D.},
	month = jun,
	year = {2015},
	pages = {214--221}
}

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