True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices. Balatti, S., Ambrogio, S., Wang, Z., & Ielmini, D. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 5(2):214–221, June, 2015. doi abstract bibtex Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.
@article{balatti_true_2015,
title = {True {Random} {Number} {Generation} by {Variability} of {Resistive} {Switching} in {Oxide}-{Based} {Devices}},
volume = {5},
issn = {2156-3357},
doi = {10.1109/JETCAS.2015.2426492},
abstract = {Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50\% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.},
number = {2},
journal = {IEEE Journal on Emerging and Selected Topics in Circuits and Systems},
author = {Balatti, S. and Ambrogio, S. and Wang, Z. and Ielmini, D.},
month = jun,
year = {2015},
pages = {214--221}
}
Downloads: 0
{"_id":"P7Ce6SE7sRfTmnyBc","bibbaseid":"balatti-ambrogio-wang-ielmini-truerandomnumbergenerationbyvariabilityofresistiveswitchinginoxidebaseddevices-2015","authorIDs":[],"author_short":["Balatti, S.","Ambrogio, S.","Wang, Z.","Ielmini, D."],"bibdata":{"bibtype":"article","type":"article","title":"True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices","volume":"5","issn":"2156-3357","doi":"10.1109/JETCAS.2015.2426492","abstract":"Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.","number":"2","journal":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","author":[{"propositions":[],"lastnames":["Balatti"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Ambrogio"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Wang"],"firstnames":["Z."],"suffixes":[]},{"propositions":[],"lastnames":["Ielmini"],"firstnames":["D."],"suffixes":[]}],"month":"June","year":"2015","pages":"214–221","bibtex":"@article{balatti_true_2015,\n\ttitle = {True {Random} {Number} {Generation} by {Variability} of {Resistive} {Switching} in {Oxide}-{Based} {Devices}},\n\tvolume = {5},\n\tissn = {2156-3357},\n\tdoi = {10.1109/JETCAS.2015.2426492},\n\tabstract = {Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50\\% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.},\n\tnumber = {2},\n\tjournal = {IEEE Journal on Emerging and Selected Topics in Circuits and Systems},\n\tauthor = {Balatti, S. and Ambrogio, S. and Wang, Z. and Ielmini, D.},\n\tmonth = jun,\n\tyear = {2015},\n\tpages = {214--221}\n}\n\n","author_short":["Balatti, S.","Ambrogio, S.","Wang, Z.","Ielmini, D."],"key":"balatti_true_2015","id":"balatti_true_2015","bibbaseid":"balatti-ambrogio-wang-ielmini-truerandomnumbergenerationbyvariabilityofresistiveswitchinginoxidebaseddevices-2015","role":"author","urls":{},"downloads":0},"bibtype":"article","biburl":"https://bibbase.org/zotero/ky25","creationDate":"2019-05-11T17:47:04.529Z","downloads":0,"keywords":[],"search_terms":["true","random","number","generation","variability","resistive","switching","oxide","based","devices","balatti","ambrogio","wang","ielmini"],"title":"True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices","year":2015,"dataSources":["XxiQtwZYfozhQmvGR"]}