Application of the Holomorphic Tauc-Lorentz-Urbach Function to Extract the Optical Constants of Amorphous Semiconductor Thin Films

Application of the Holomorphic Tauc-Lorentz-Urbach Function to Extract the Optical Constants of Amorphous Semiconductor Thin Films. Ballester, M., García, M., Márquez, A. P., Blanco, E., Fernández, S. M., Minkov, D., Katsaggelos, A. K., Cossairt, O., Willomitzer, F., & Márquez, E. Coatings, 12(10):1549, MDPI, oct, 2022.

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The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue, the model becomes inaccurate. In the present work, we will adopt a procedure to conveniently transform the TLU model into a self-consistent dispersion model. The transformation involves the integration of the original TLU imaginary dielectric function ϵ2 by using a Lorentzian-type function of semi-width, $Γ$. This novel model is analytic and obeys the other necessary mathematical requirements of the optical constants of solid-state materials. The main difference with the non-analytic TLU model occurs at values of the photon energy near or lower than that of the bandgap energy (within the Urbach absorption region). In particular, this new model allows us to reliably extend the optical characterization of amorphous-semiconductor thin films within the limit to zero photon energy. To the best of our knowledge, this is the first time that the analytic TLU model has been successfully used to accurately determine the optical constants of unhydrogenated a-Si films using only their normal-incidence transmission spectra.

@article{ballester2022application,
abstract = {The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue, the model becomes inaccurate. In the present work, we will adopt a procedure to conveniently transform the TLU model into a self-consistent dispersion model. The transformation involves the integration of the original TLU imaginary dielectric function ϵ2 by using a Lorentzian-type function of semi-width, $\Gamma$. This novel model is analytic and obeys the other necessary mathematical requirements of the optical constants of solid-state materials. The main difference with the non-analytic TLU model occurs at values of the photon energy near or lower than that of the bandgap energy (within the Urbach absorption region). In particular, this new model allows us to reliably extend the optical characterization of amorphous-semiconductor thin films within the limit to zero photon energy. To the best of our knowledge, this is the first time that the analytic TLU model has been successfully used to accurately determine the optical constants of unhydrogenated a-Si films using only their normal-incidence transmission spectra.},
author = {Ballester, Manuel and Garc{\'{i}}a, Marcos and M{\'{a}}rquez, Almudena P. and Blanco, Eduardo and Fern{\'{a}}ndez, Susana M. and Minkov, Dorian and Katsaggelos, Aggelos K. and Cossairt, Oliver and Willomitzer, Florian and M{\'{a}}rquez, Emilio},
doi = {10.3390/coatings12101549},
issn = {2079-6412},
journal = {Coatings},
keywords = {Tauc–Lorentz model,Tauc–Lorentz–Urbach model,amorphous semiconductors,dielectric function,optical properties,thin-film characterization},
month = {oct},
number = {10},
pages = {1549},
publisher = {MDPI},
title = {{Application of the Holomorphic Tauc-Lorentz-Urbach Function to Extract the Optical Constants of Amorphous Semiconductor Thin Films}},
url = {https://www.mdpi.com/2079-6412/12/10/1549},
volume = {12},
year = {2022}
}

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