Effect of Ge doping on growth stress and conductivity in AlxGa1-xN

Effect of Ge doping on growth stress and conductivity in AlxGa1-xN. Bansal, A., Wang, K., Lundh, J. S., Choi, S., & Redwing, J. M. Applied Physics Letters, 114(14):142101, April, 2019.

Paper doi abstract bibtex

Silicon (Si) is a common n-type donor in AlxGa1-xN; however, it induces bending of edge-type threading dislocations which can generate tensile stress in the ﬁlm leading to the formation of channeling cracks in thick layers. Germanium (Ge) has previously been investigated as an alternative to Si for n-type doping of GaN, but its impact on ﬁlm stress in AlxGa1-xN has not been investigated in detail. In this study, we employ in situ wafer curvature measurements combined with postgrowth characterization to investigate Ge doping of AlxGa1-xN (x ¼ 0–0.62) layers grown on 6H-SiC by metalorganic chemical vapor deposition. It was found that Ge doping (n $ 1.6 Â 1019 cmÀ3) of Al0.30Ga0.70N does not induce tensile stress during growth in contrast to that observed with a similar level of Si doping. In addition, the average inclination angle of edge dislocations was similar for undoped and Ge doped ﬁlms indicating that Ge does not promote surface-mediated dislocation climb. High n-type doping was achieved in Ge doped AlxGa1-xN for lower Al fraction range (x {\textless} 0.5), but resistivity increased and carrier density decreased signiﬁcantly for higher Al fractions. The results demonstrate Ge doping as a viable alternative to Si doping of AlxGa1-xN (x {\textless} 0.5) for achieving thick, crack-free layers.

@article{bansal_effect_2019,
	title = {Effect of {Ge} doping on growth stress and conductivity in {AlxGa1}-{xN}},
	volume = {114},
	issn = {0003-6951, 1077-3118},
	url = {https://pubs.aip.org/aip/apl/article/4370},
	doi = {10.1063/1.5080680},
	abstract = {Silicon (Si) is a common n-type donor in AlxGa1-xN; however, it induces bending of edge-type threading dislocations which can generate tensile stress in the ﬁlm leading to the formation of channeling cracks in thick layers. Germanium (Ge) has previously been investigated as an alternative to Si for n-type doping of GaN, but its impact on ﬁlm stress in AlxGa1-xN has not been investigated in detail. In this study, we employ in situ wafer curvature measurements combined with postgrowth characterization to investigate Ge doping of AlxGa1-xN (x ¼ 0–0.62) layers grown on 6H-SiC by metalorganic chemical vapor deposition. It was found that Ge doping (n \$ 1.6 Â 1019 cmÀ3) of Al0.30Ga0.70N does not induce tensile stress during growth in contrast to that observed with a similar level of Si doping. In addition, the average inclination angle of edge dislocations was similar for undoped and Ge doped ﬁlms indicating that Ge does not promote surface-mediated dislocation climb. High n-type doping was achieved in Ge doped AlxGa1-xN for lower Al fraction range (x {\textless} 0.5), but resistivity increased and carrier density decreased signiﬁcantly for higher Al fractions. The results demonstrate Ge doping as a viable alternative to Si doping of AlxGa1-xN (x {\textless} 0.5) for achieving thick, crack-free layers.},
	language = {en},
	number = {14},
	urldate = {2023-05-18},
	journal = {Applied Physics Letters},
	author = {Bansal, Anushka and Wang, Ke and Lundh, James Spencer and Choi, Sukwon and Redwing, Joan M.},
	month = apr,
	year = {2019},
	pages = {142101},
}

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