Realistic model of LED structure with InGaN quantum-dots active region. Barettin, D., Der Maur, M. A., Pecchia, A., Rodrigues, W., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Nikolaev, A. E., Cherkashin, N., & Hÿtch, M. J. In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), pages 1543–1546, 2015. IEEE. bibtex @inproceedings{barettin_realistic_2015,
title = {Realistic model of {LED} structure with {InGaN} quantum-dots active region},
isbn = {1-4673-8156-X},
booktitle = {2015 {IEEE} 15th {International} {Conference} on {Nanotechnology} ({IEEE}-{NANO})},
publisher = {IEEE},
author = {Barettin, Daniele and Der Maur, Matthias Auf and Pecchia, Alessandro and Rodrigues, Walter and Tsatsulnikov, Andrei F. and Sakharov, Alexei V. and Lundin, Wsevolod V. and Nikolaev, Andrey E. and Cherkashin, Nikolay and Hÿtch, Martin J.},
year = {2015},
pages = {1543--1546},
}
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