Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures. Bark, C. W., Sharma, P., Wang, Y., Baek, S. H., Lee, S., Ryu, S., Folkman, C. M., Paudel, T. R., Kumar, A., Kalinin, S. V., Sokolov, A., Tsymbal, E. Y., Rzchowski, M. S., Gruverman, A., & Eom, C. B. NANO LETTERS, 12(4):1765-1771, APR, 2012.
doi  abstract   bibtex   
Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.
@article{ ISI:000302524600004,
Author = {Bark, C. W. and Sharma, P. and Wang, Y. and Baek, S. H. and Lee, S. and
   Ryu, S. and Folkman, C. M. and Paudel, T. R. and Kumar, A. and Kalinin,
   S. V. and Sokolov, A. and Tsymbal, E. Y. and Rzchowski, M. S. and
   Gruverman, A. and Eom, C. B.},
Title = {{Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures}},
Journal = {{NANO LETTERS}},
Year = {{2012}},
Volume = {{12}},
Number = {{4}},
Pages = {{1765-1771}},
Month = {{APR}},
Abstract = {{Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces
   drew significant attention to the development of oxide electronic
   structures where electronic confinement can be reduced to the nanometer
   range. While the mechanisms for the conductivity modulation are quite
   different and include metal insulator phase transition and surface
   charge writing, generally it is implied that this effect is a result of
   electrical modification of the LaAlO3 surface (either due to
   electrochemical dissociation of surface adsorbates or free charge
   deposition) leading to the change in the two-dimensional electron. gas
   (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper,
   using piezoresponse force microscopy we demonstrate a switchable
   electromechanical response of the LAO overlayer, which we attribute to
   the motion of oxygen vacancies through the LAO layer thickness. These
   electrically induced reversible changes in bulk stoichiometry of the LAO
   layer are a signature of a possible additional mechanism for nanoscale
   oxide 2DEG control on LAO/STO interfaces.}},
DOI = {{10.1021/nl3001088}},
ISSN = {{1530-6984}},
ResearcherID-Numbers = {{Baek, Seung-Hyub/B-9189-2013
   Kumar, Amit/C-9662-2012
   Kalinin, Sergei/I-9096-2012
   Wang, Yong/F-7019-2010
   Bark, Chung Wung/B-9534-2014
   Eom, Chang-Beom/I-5567-2014
   Gruverman, Alexei/P-3537-2014
   Tsymbal, Evgeny/G-3493-2013
   Lee, Sanghan/C-8876-2012}},
ORCID-Numbers = {{Kumar, Amit/0000-0002-1194-5531
   Kalinin, Sergei/0000-0001-5354-6152
   Wang, Yong/0000-0002-0248-9757
   Bark, Chung Wung/0000-0002-9394-4240
   Gruverman, Alexei/0000-0003-0492-2750
   Tsymbal, Evgeny/0000-0002-6728-5480
   Lee, Sanghan/0000-0002-5807-864X}},
Unique-ID = {{ISI:000302524600004}},
}

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