Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures. Bark, C. W., Sharma, P., Wang, Y., Baek, S. H., Lee, S., Ryu, S., Folkman, C. M., Paudel, T. R., Kumar, A., Kalinin, S. V., Sokolov, A., Tsymbal, E. Y., Rzchowski, M. S., Gruverman, A., & Eom, C. B. NANO LETTERS, 12(4):1765-1771, APR, 2012. doi abstract bibtex Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.
@article{ ISI:000302524600004,
Author = {Bark, C. W. and Sharma, P. and Wang, Y. and Baek, S. H. and Lee, S. and
Ryu, S. and Folkman, C. M. and Paudel, T. R. and Kumar, A. and Kalinin,
S. V. and Sokolov, A. and Tsymbal, E. Y. and Rzchowski, M. S. and
Gruverman, A. and Eom, C. B.},
Title = {{Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures}},
Journal = {{NANO LETTERS}},
Year = {{2012}},
Volume = {{12}},
Number = {{4}},
Pages = {{1765-1771}},
Month = {{APR}},
Abstract = {{Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces
drew significant attention to the development of oxide electronic
structures where electronic confinement can be reduced to the nanometer
range. While the mechanisms for the conductivity modulation are quite
different and include metal insulator phase transition and surface
charge writing, generally it is implied that this effect is a result of
electrical modification of the LaAlO3 surface (either due to
electrochemical dissociation of surface adsorbates or free charge
deposition) leading to the change in the two-dimensional electron. gas
(2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper,
using piezoresponse force microscopy we demonstrate a switchable
electromechanical response of the LAO overlayer, which we attribute to
the motion of oxygen vacancies through the LAO layer thickness. These
electrically induced reversible changes in bulk stoichiometry of the LAO
layer are a signature of a possible additional mechanism for nanoscale
oxide 2DEG control on LAO/STO interfaces.}},
DOI = {{10.1021/nl3001088}},
ISSN = {{1530-6984}},
ResearcherID-Numbers = {{Baek, Seung-Hyub/B-9189-2013
Kumar, Amit/C-9662-2012
Kalinin, Sergei/I-9096-2012
Wang, Yong/F-7019-2010
Bark, Chung Wung/B-9534-2014
Eom, Chang-Beom/I-5567-2014
Gruverman, Alexei/P-3537-2014
Tsymbal, Evgeny/G-3493-2013
Lee, Sanghan/C-8876-2012}},
ORCID-Numbers = {{Kumar, Amit/0000-0002-1194-5531
Kalinin, Sergei/0000-0001-5354-6152
Wang, Yong/0000-0002-0248-9757
Bark, Chung Wung/0000-0002-9394-4240
Gruverman, Alexei/0000-0003-0492-2750
Tsymbal, Evgeny/0000-0002-6728-5480
Lee, Sanghan/0000-0002-5807-864X}},
Unique-ID = {{ISI:000302524600004}},
}
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While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. 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R. and Kumar, A. and Kalinin,\n S. V. and Sokolov, A. and Tsymbal, E. Y. and Rzchowski, M. S. and\n Gruverman, A. and Eom, C. B.},\nTitle = {{Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures}},\nJournal = {{NANO LETTERS}},\nYear = {{2012}},\nVolume = {{12}},\nNumber = {{4}},\nPages = {{1765-1771}},\nMonth = {{APR}},\nAbstract = {{Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces\n drew significant attention to the development of oxide electronic\n structures where electronic confinement can be reduced to the nanometer\n range. While the mechanisms for the conductivity modulation are quite\n different and include metal insulator phase transition and surface\n charge writing, generally it is implied that this effect is a result of\n electrical modification of the LaAlO3 surface (either due to\n electrochemical dissociation of surface adsorbates or free charge\n deposition) leading to the change in the two-dimensional electron. gas\n (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper,\n using piezoresponse force microscopy we demonstrate a switchable\n electromechanical response of the LAO overlayer, which we attribute to\n the motion of oxygen vacancies through the LAO layer thickness. These\n electrically induced reversible changes in bulk stoichiometry of the LAO\n layer are a signature of a possible additional mechanism for nanoscale\n oxide 2DEG control on LAO/STO interfaces.}},\nDOI = {{10.1021/nl3001088}},\nISSN = {{1530-6984}},\nResearcherID-Numbers = {{Baek, Seung-Hyub/B-9189-2013\n Kumar, Amit/C-9662-2012\n Kalinin, Sergei/I-9096-2012\n Wang, Yong/F-7019-2010\n Bark, Chung Wung/B-9534-2014\n Eom, Chang-Beom/I-5567-2014\n Gruverman, Alexei/P-3537-2014\n Tsymbal, Evgeny/G-3493-2013\n Lee, Sanghan/C-8876-2012}},\nORCID-Numbers = {{Kumar, Amit/0000-0002-1194-5531\n Kalinin, Sergei/0000-0001-5354-6152\n Wang, Yong/0000-0002-0248-9757\n Bark, Chung Wung/0000-0002-9394-4240\n Gruverman, Alexei/0000-0003-0492-2750\n Tsymbal, Evgeny/0000-0002-6728-5480\n Lee, Sanghan/0000-0002-5807-864X}},\nUnique-ID = {{ISI:000302524600004}},\n}\n\n","author_short":["Bark, C. W.","Sharma, P.","Wang, Y.","Baek, S. H.","Lee, S.","Ryu, S.","Folkman, C. M.","Paudel, T. 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