Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. Bashouti, M. Y, Sardashti, K., Ristein, J., & Christiansen, S. H Physical chemistry chemical physics : PCCP, 14(34):11877–81, September, 2012. ![Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T \textless 200 °C). At high temperatures (T≥ 200 °C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.
@article{Bashouti2012,
title = {Early stages of oxide growth in {H}-terminated silicon nanowires: determination of kinetic behavior and activation energy.},
volume = {14},
issn = {1463-9084},
url = {http://www.ncbi.nlm.nih.gov/pubmed/22837043},
doi = {10.1039/c2cp41709j},
abstract = {Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T {\textless} 200 °C). At high temperatures (T≥ 200 °C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.},
number = {34},
urldate = {2013-12-17},
journal = {Physical chemistry chemical physics : PCCP},
author = {Bashouti, Muhammad Y and Sardashti, Kasra and Ristein, Juergen and Christiansen, Silke H},
month = sep,
year = {2012},
pmid = {22837043},
pages = {11877--81},
}
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