A 40-67 GHz Power Amplifier With 13 dBm ℙSAT and 16% PAE in 28 nm CMOS LP. Bassi, M., Zhao, J., Bevilacqua, A., Ghilioni, A., Mazzanti, A., & Svelto, F. J. Solid-State Circuits, 50(7):1618-1628, 2015.
A 40-67 GHz Power Amplifier With 13 dBm ℙSAT and 16% PAE in 28 nm CMOS LP. [link]Link  A 40-67 GHz Power Amplifier With 13 dBm ℙSAT and 16% PAE in 28 nm CMOS LP. [link]Paper  bibtex   
@article{journals/jssc/BassiZBGMS15,
  added-at = {2016-03-21T00:00:00.000+0100},
  author = {Bassi, Matteo and Zhao, Junlei and Bevilacqua, Andrea and Ghilioni, Andrea and Mazzanti, Andrea and Svelto, Francesco},
  biburl = {http://www.bibsonomy.org/bibtex/2db9679df1d9776b87ca7588d752a327b/dblp},
  ee = {http://dx.doi.org/10.1109/JSSC.2015.2409295},
  interhash = {89b54eef9ddb8f182ca1021e28bbb1a1},
  intrahash = {db9679df1d9776b87ca7588d752a327b},
  journal = {J. Solid-State Circuits},
  keywords = {dblp},
  number = 7,
  pages = {1618-1628},
  timestamp = {2016-03-22T11:52:21.000+0100},
  title = {A 40-67 GHz Power Amplifier With 13 dBm ℙSAT and 16% PAE in 28 nm CMOS LP.},
  url = {http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#BassiZBGMS15},
  volume = 50,
  year = 2015
}

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