@article{BaydinEtAl2017SR,
	title = {The photoelastic coefficient {P} 12 of {H}+ implanted {GaAs} as a function of defect density},
	volume = {7},
	copyright = {All rights reserved},
	issn = {2045-2322},
	url = {https://doi.org/10.1038/s41598-017-14903-x http://www.nature.com/articles/s41598-017-14903-x},
	doi = {10.1038/s41598-017-14903-x},
	abstract = {The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, detectors, and diodes) used in space probes are subject to damage arising from energetic proton (H+) irradiation. For that reason, the effect of proton irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelectronics. However, there yet remains a lack of systematic studies of energetic proton induced changes in the photoelastic properties of bulk GaAs. In this work, the H+ energy and fluence chosen for GaAs implantation are similar to that of protons originating from the radiation belts and solar flares. We present the depth-dependent photoelastic coefficient P 12 profile in non-annealed H+ implanted GaAs obtained from the analysis of the time-domain Brillouin scattering spectra. The depth-dependent profiles are found to be broader than the defect distribution profiles predicted by Monte Carlo simulations. This fact indicates that the changes in photoelastic coefficient P 12 depend nonlinearly on the defect concentrations created by the hydrogen implantation. These studies provide insight into the spatial extent to which defects influence photoelastic properties of GaAs.},
	number = {1},
	journal = {Scientific Reports},
	author = {Baydin, Andrey and Krzyzanowska, Halina and Gatamov, Rustam and Garnett, Joy and Tolk, Norman},
	month = dec,
	year = {2017},
	note = {ZSCC: NoCitationData[s0]},
	pages = {15150},
	url_paper={https://api.zotero.org/users/5832111/publications/items/VI5ZKTP3/file/view}
}

{"_id":"eGmWfNHMNxEZZfQcw","bibbaseid":"baydin-krzyzanowska-gatamov-garnett-tolk-thephotoelasticcoefficientp12ofhimplantedgaasasafunctionofdefectdensity-2017","author_short":["Baydin, A.","Krzyzanowska, H.","Gatamov, R.","Garnett, J.","Tolk, N."],"bibdata":{"bibtype":"article","type":"article","title":"The photoelastic coefficient P 12 of H+ implanted GaAs as a function of defect density","volume":"7","copyright":"All rights reserved","issn":"2045-2322","url":"https://doi.org/10.1038/s41598-017-14903-x http://www.nature.com/articles/s41598-017-14903-x","doi":"10.1038/s41598-017-14903-x","abstract":"The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, detectors, and diodes) used in space probes are subject to damage arising from energetic proton (H+) irradiation. For that reason, the effect of proton irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelectronics. However, there yet remains a lack of systematic studies of energetic proton induced changes in the photoelastic properties of bulk GaAs. In this work, the H+ energy and fluence chosen for GaAs implantation are similar to that of protons originating from the radiation belts and solar flares. We present the depth-dependent photoelastic coefficient P 12 profile in non-annealed H+ implanted GaAs obtained from the analysis of the time-domain Brillouin scattering spectra. The depth-dependent profiles are found to be broader than the defect distribution profiles predicted by Monte Carlo simulations. This fact indicates that the changes in photoelastic coefficient P 12 depend nonlinearly on the defect concentrations created by the hydrogen implantation. These studies provide insight into the spatial extent to which defects influence photoelastic properties of GaAs.","number":"1","journal":"Scientific Reports","author":[{"propositions":[],"lastnames":["Baydin"],"firstnames":["Andrey"],"suffixes":[]},{"propositions":[],"lastnames":["Krzyzanowska"],"firstnames":["Halina"],"suffixes":[]},{"propositions":[],"lastnames":["Gatamov"],"firstnames":["Rustam"],"suffixes":[]},{"propositions":[],"lastnames":["Garnett"],"firstnames":["Joy"],"suffixes":[]},{"propositions":[],"lastnames":["Tolk"],"firstnames":["Norman"],"suffixes":[]}],"month":"December","year":"2017","note":"ZSCC: NoCitationData[s0]","pages":"15150","url_paper":"https://api.zotero.org/users/5832111/publications/items/VI5ZKTP3/file/view","bibtex":"@article{BaydinEtAl2017SR,\n\ttitle = {The photoelastic coefficient {P} 12 of {H}+ implanted {GaAs} as a function of defect density},\n\tvolume = {7},\n\tcopyright = {All rights reserved},\n\tissn = {2045-2322},\n\turl = {https://doi.org/10.1038/s41598-017-14903-x http://www.nature.com/articles/s41598-017-14903-x},\n\tdoi = {10.1038/s41598-017-14903-x},\n\tabstract = {The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, detectors, and diodes) used in space probes are subject to damage arising from energetic proton (H+) irradiation. For that reason, the effect of proton irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelectronics. However, there yet remains a lack of systematic studies of energetic proton induced changes in the photoelastic properties of bulk GaAs. In this work, the H+ energy and fluence chosen for GaAs implantation are similar to that of protons originating from the radiation belts and solar flares. We present the depth-dependent photoelastic coefficient P 12 profile in non-annealed H+ implanted GaAs obtained from the analysis of the time-domain Brillouin scattering spectra. The depth-dependent profiles are found to be broader than the defect distribution profiles predicted by Monte Carlo simulations. This fact indicates that the changes in photoelastic coefficient P 12 depend nonlinearly on the defect concentrations created by the hydrogen implantation. These studies provide insight into the spatial extent to which defects influence photoelastic properties of GaAs.},\n\tnumber = {1},\n\tjournal = {Scientific Reports},\n\tauthor = {Baydin, Andrey and Krzyzanowska, Halina and Gatamov, Rustam and Garnett, Joy and Tolk, Norman},\n\tmonth = dec,\n\tyear = {2017},\n\tnote = {ZSCC: NoCitationData[s0]},\n\tpages = {15150},\n\turl_paper={https://api.zotero.org/users/5832111/publications/items/VI5ZKTP3/file/view}\n}\n\n\n\n","author_short":["Baydin, A.","Krzyzanowska, H.","Gatamov, R.","Garnett, J.","Tolk, N."],"key":"BaydinEtAl2017SR","id":"BaydinEtAl2017SR","bibbaseid":"baydin-krzyzanowska-gatamov-garnett-tolk-thephotoelasticcoefficientp12ofhimplantedgaasasafunctionofdefectdensity-2017","role":"author","urls":{"Paper":"https://doi.org/10.1038/s41598-017-14903-x http://www.nature.com/articles/s41598-017-14903-x"," paper":"https://api.zotero.org/users/5832111/publications/items/VI5ZKTP3/file/view"},"metadata":{"authorlinks":{}},"downloads":0,"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero-mypublications/andbay","dataSources":["ozDdgTE7jnCDRbdPM"],"keywords":[],"search_terms":["photoelastic","coefficient","implanted","gaas","function","defect","density","baydin","krzyzanowska","gatamov","garnett","tolk"],"title":"The photoelastic coefficient P 12 of H+ implanted GaAs as a function of defect density","year":2017}