Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks. Bayn, I., Chen, E. H., Trusheim, M. E., Li, L., Schröder, T., Gaathon, O., Lu, M., Stein, A., Liu, M., Kisslinger, K., Clevenson, H., & Englund, D. Nano Letters, 15(3):1751–1758, March, 2015. Publisher: American Chemical Society
Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks [link]Paper  doi  abstract   bibtex   
A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ∼20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ∼1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of 26 ± 7 nm and a distribution of NV–NV separations of 16 ± 5 nm.
@article{bayn_generation_2015,
	title = {Generation of {Ensembles} of {Individually} {Resolvable} {Nitrogen} {Vacancies} {Using} {Nanometer}-{Scale} {Apertures} in {Ultrahigh}-{Aspect} {Ratio} {Planar} {Implantation} {Masks}},
	volume = {15},
	issn = {1530-6984},
	url = {https://doi.org/10.1021/nl504441m},
	doi = {10.1021/nl504441m},
	abstract = {A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ∼20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ∼1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of 26 ± 7 nm and a distribution of NV–NV separations of 16 ± 5 nm.},
	number = {3},
	urldate = {2022-08-03},
	journal = {Nano Letters},
	author = {Bayn, Igal and Chen, Edward H. and Trusheim, Matthew E. and Li, Luozhou and Schröder, Tim and Gaathon, Ophir and Lu, Ming and Stein, Aaron and Liu, Mingzhao and Kisslinger, Kim and Clevenson, Hannah and Englund, Dirk},
	month = mar,
	year = {2015},
	note = {Publisher: American Chemical Society},
	pages = {1751--1758},
}

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