@article{bellocchi_eu3+_2012,
	title = {Eu3+ reduction and efficient light emission in {Eu}2O3 films deposited on {Si} substrates},
	volume = {20},
	abstract = {A stable Eu3+-{\textgreater} Eu2+ reduction is accomplished by thermal annealing in N-2 ambient of EU2O3 films deposited by magnetron sputtering on Si substrates. Transmission electron microscopy and x-ray diffraction measurements demonstrate the occurrence of a complex reactivity at the Eu2O3/Si interface, leading to the formation of Eu2+ silicates, characterized by a very strong (the measured external quantum efficiency is about 10\%) and broad room temperature photoluminescence (PL) peak centered at 590 nm. This signal is much more efficient than the Eu3+ emission, mainly consisting of a sharp PL peak at 622 nm, observed in O-2-annealed films, where the presence of a SiO2 layer at the Eu2O3/Si interface prevents Eu2+ formation. (C) 2012 Optical Society of America},
	number = {5},
	journal = {Optics Express},
	author = {Bellocchi, Gabriele and Franzo, Giorgia and Iacona, Fabio and Boninelli, Simona and Miritello, Maria and Cesca, Tiziana and Priolo, Francesco},
	month = feb,
	year = {2012},
	note = {WOS:000301053200069},
	pages = {5501--5507}
}

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