@inproceedings{ beltran_nano-analytical_2012,
  address = {Stafa-Zurich},
  title = {Nano-Analytical and Electrical Characterization of {4H-SiC} {MOSFETs}},
  volume = {711},
  abstract = {{4H-SiC} presents great advantages for its use in power electronic devices working at particular conditions. However the development of {MOSFETs} based on this material is limited by mobility degradation. N-channel {SiC} {MOSFETs} were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the {SiC-SiO2} interface are considered in relation with the measured low electron mobility of the {MOSFETS.}},
  language = {English},
  booktitle = {Heterosic \& Wasmpe 2011},
  publisher = {Trans Tech Publications Ltd},
  author = {Beltran, Ana M. and Schamm-Chardon, Sylvie and Mortet, Vincent and Lefebvre, Matthieu and Bedel-Pereira, Elena and Cristiano, Fuccio and Strenger, Christian and Haeublein, Volker and Bauer, Anton J.},
  editor = {Alquier, D.},
  year = {2012},
  keywords = {4h, {4H-SiC} {MOSFETs}, Hall   mobility, hrtem, interface, {SiC/SiO2} interface, silicon-carbide, spatially-resolved {EELS}},
  pages = {134--138}
}

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