Low-temperature Mocvd deposition of Bi 2 Te 3 thin films using Et 2 BiTeEt as single source precursor. Bendt, G., Gassa, S., Rieger, F., Jooss, C., & Schulz, S. Journal of Crystal Growth, 490:77–83, Elsevier BV, 2018.
Low-temperature Mocvd deposition of Bi 2 Te 3 thin films using Et 2 BiTeEt as single source precursor [link]Paper  doi  bibtex   
@article{10.1016/j.jcrysgro.2018.03.021,
doi = {10.1016/j.jcrysgro.2018.03.021},
url = {http://dx.doi.org/10.1016/j.jcrysgro.2018.03.021},
year = 2018,
publisher = {Elsevier {BV}},
volume = {490},
pages = {77--83},
author = {Georg Bendt and Sanae Gassa and Felix Rieger and Christian Jooss and Stephan Schulz},
title = {Low-temperature {Mocvd} deposition of Bi 2 Te 3  thin films using Et 2 {BiTeEt} as single source precursor},
journal = {Journal of Crystal Growth}
}

Downloads: 0