@article{berhane_bright_2017,
	title = {Bright {Room}-{Temperature} {Single}-{Photon} {Emission} from {Defects} in {Gallium} {Nitride}},
	volume = {29},
	issn = {1521-4095},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201605092},
	doi = {10.1002/adma.201605092},
	abstract = {Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.},
	number = {12},
	urldate = {2022-08-03},
	journal = {Advanced Materials},
	author = {Berhane, Amanuel M. and Jeong, Kwang-Yong and Bodrog, Zoltán and Fiedler, Saskia and Schröder, Tim and Triviño, Noelia Vico and Palacios, Tomás and Gali, Adam and Toth, Milos and Englund, Dirk and Aharonovich, Igor},
	year = {2017},
	note = {\_eprint: https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201605092},
	keywords = {cubic inclusions, gallium nitride wafer, narrow linewidth, point defects, single-photon sources},
	pages = {1605092},
}

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