@article{
 title = {Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF stem},
 type = {article},
 year = {2017},
 identifiers = {[object Object]},
 keywords = {Atomic resolution,Frozen phonon simulations,Scanning transmission electron microscopy,Strained interfaces,Surface relaxation},
 websites = {http://doi.wiley.com/10.1111/jmi.12622},
 month = {9},
 day = {1},
 id = {cb18908c-1681-3225-a708-8786e76bfd4c},
 created = {2017-09-19T10:06:53.011Z},
 file_attached = {true},
 profile_id = {f593ffaf-f5ef-31db-ab88-e023f3a82e91},
 last_modified = {2018-04-11T11:53:28.107Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {true},
 hidden = {false},
 folder_uuids = {fb82d947-72ab-4460-b561-3eb7c78d2ee9,fdb5e0cd-09c7-45b3-9244-098e0449f800},
 private_publication = {false},
 abstract = {© 2017 Royal Microscopical Society. The surfaces of thin transmission electron microscopy (TEM) specimens of strained heterostructures can relax. The resulting bending of the lattice planes significantly influences high-angle annular dark field (HAADF) measurements. We investigate the impact by evaluating the intensities measured at the atomic columns as well as their positions in high-resolution HAADF images. In addition, the consequences in the diffraction plane will be addressed by simulated position averaged convergent beam electron diffraction (PACBED) patterns. The experimental column intensities and positions acquired from a strained Ga(P,As) quantum well (QW) embedded in a in a GaP matrix agree very well with frozen phonon contrast simulations, if the surface relaxation is taken into account by finite element relaxation. Neglecting the surface relaxation the As content of the QW can be significantly underestimated. Taking the effects into account correctly, we find that the lower interface of the investigated Ga(P,As) QW is atomically abrupt whereas the upper one is smeared out.},
 bibtype = {article},
 author = {Beyer, Andreas and Duschek, Lennart and Belz, Jürgen and Oelerich, Jan Oliver and Jandieri, Kakhaber and Volz, Kerstin},
 journal = {Journal of Microscopy}
}

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The surfaces of thin transmission electron microscopy (TEM) specimens of strained heterostructures can relax. The resulting bending of the lattice planes significantly influences high-angle annular dark field (HAADF) measurements. We investigate the impact by evaluating the intensities measured at the atomic columns as well as their positions in high-resolution HAADF images. In addition, the consequences in the diffraction plane will be addressed by simulated position averaged convergent beam electron diffraction (PACBED) patterns. The experimental column intensities and positions acquired from a strained Ga(P,As) quantum well (QW) embedded in a in a GaP matrix agree very well with frozen phonon contrast simulations, if the surface relaxation is taken into account by finite element relaxation. Neglecting the surface relaxation the As content of the QW can be significantly underestimated. Taking the effects into account correctly, we find that the lower interface of the investigated Ga(P,As) QW is atomically abrupt whereas the upper one is smeared out.","bibtype":"article","author":"Beyer, Andreas and Duschek, Lennart and Belz, Jürgen and Oelerich, Jan Oliver and Jandieri, Kakhaber and Volz, Kerstin","journal":"Journal of Microscopy","bibtex":"@article{\n title = {Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF stem},\n type = {article},\n year = {2017},\n identifiers = {[object Object]},\n keywords = {Atomic resolution,Frozen phonon simulations,Scanning transmission electron microscopy,Strained interfaces,Surface relaxation},\n websites = {http://doi.wiley.com/10.1111/jmi.12622},\n month = {9},\n day = {1},\n id = {cb18908c-1681-3225-a708-8786e76bfd4c},\n created = {2017-09-19T10:06:53.011Z},\n file_attached = {true},\n profile_id = {f593ffaf-f5ef-31db-ab88-e023f3a82e91},\n last_modified = {2018-04-11T11:53:28.107Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {true},\n hidden = {false},\n folder_uuids = {fb82d947-72ab-4460-b561-3eb7c78d2ee9,fdb5e0cd-09c7-45b3-9244-098e0449f800},\n private_publication = {false},\n abstract = {© 2017 Royal Microscopical Society. The surfaces of thin transmission electron microscopy (TEM) specimens of strained heterostructures can relax. The resulting bending of the lattice planes significantly influences high-angle annular dark field (HAADF) measurements. We investigate the impact by evaluating the intensities measured at the atomic columns as well as their positions in high-resolution HAADF images. In addition, the consequences in the diffraction plane will be addressed by simulated position averaged convergent beam electron diffraction (PACBED) patterns. The experimental column intensities and positions acquired from a strained Ga(P,As) quantum well (QW) embedded in a in a GaP matrix agree very well with frozen phonon contrast simulations, if the surface relaxation is taken into account by finite element relaxation. Neglecting the surface relaxation the As content of the QW can be significantly underestimated. 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