@article{ ISI:000360593900042,
Author = {Bi, Feng and Huang, Mengchen and Lee, Hyungwoo and Eom, Chang-Beom and
   Irvin, Patrick and Levy, Jeremy},
Title = {{LaAlO3 thickness window for electronically controlled magnetism at
   LaAlO3/SrTiO3 heterointerfaces}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2015}},
Volume = {{107}},
Number = {{8}},
Month = {{AUG 24}},
Abstract = {{Complex-oxide heterostructures exhibit rich physical behavior such as
   emergent conductivity, superconductivity, and magnetism that are
   intriguing for scientific reasons as well as for potential technological
   applications. It was recently discovered that in-plane magnetism at the
   LaAlO3/SrTiO3 (LAO/STO) interface can be electronically controlled at
   room temperature. Here, we employ magnetic force microscopy to
   investigate electronically controlled ferromagnetism at the LAO/STO
   interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c.
   Magnetic signatures are observed only within a thickness window 8 u.c.
   <= t <= 25 u.c. Within this window, the device capacitance corresponds
   well to the expected geometric value, while for thicknesses outside this
   window, the capacitance is strongly suppressed. The ability to modulate
   electronic and magnetic properties of LAO/STO devices depends on the
   ability to control carrier density, which is in turn constrained by
   intrinsic tunneling mechanisms. (C) 2015 AIP Publishing LLC.}},
DOI = {{10.1063/1.4929430}},
Article-Number = {{082402}},
ISSN = {{0003-6951}},
EISSN = {{1077-3118}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014
   Irvin, Patrick/E-2159-2012
   Lee, Hyungwoo/H-9347-2018}},
ORCID-Numbers = {{Irvin, Patrick/0000-0002-0248-2758
   }},
Unique-ID = {{ISI:000360593900042}},
}

{"_id":"5yNQyBPCtfE73J38b","bibbaseid":"bi-huang-lee-eom-irvin-levy-laalo3thicknesswindowforelectronicallycontrolledmagnetismatlaalo3srtio3heterointerfaces-2015","downloads":0,"creationDate":"2018-09-17T23:43:09.123Z","title":"LaAlO3 thickness window for electronically controlled magnetism at LaAlO3/SrTiO3 heterointerfaces","author_short":["Bi, F.","Huang, M.","Lee, H.","Eom, C.","Irvin, P.","Levy, J."],"year":2015,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Bi"],"firstnames":["Feng"],"suffixes":[]},{"propositions":[],"lastnames":["Huang"],"firstnames":["Mengchen"],"suffixes":[]},{"propositions":[],"lastnames":["Lee"],"firstnames":["Hyungwoo"],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["Chang-Beom"],"suffixes":[]},{"propositions":[],"lastnames":["Irvin"],"firstnames":["Patrick"],"suffixes":[]},{"propositions":[],"lastnames":["Levy"],"firstnames":["Jeremy"],"suffixes":[]}],"title":"LaAlO3 thickness window for electronically controlled magnetism at LaAlO3/SrTiO3 heterointerfaces","journal":"APPLIED PHYSICS LETTERS","year":"2015","volume":"107","number":"8","month":"AUG 24","abstract":"Complex-oxide heterostructures exhibit rich physical behavior such as emergent conductivity, superconductivity, and magnetism that are intriguing for scientific reasons as well as for potential technological applications. It was recently discovered that in-plane magnetism at the LaAlO3/SrTiO3 (LAO/STO) interface can be electronically controlled at room temperature. Here, we employ magnetic force microscopy to investigate electronically controlled ferromagnetism at the LAO/STO interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c. Magnetic signatures are observed only within a thickness window 8 u.c. <= t <= 25 u.c. Within this window, the device capacitance corresponds well to the expected geometric value, while for thicknesses outside this window, the capacitance is strongly suppressed. The ability to modulate electronic and magnetic properties of LAO/STO devices depends on the ability to control carrier density, which is in turn constrained by intrinsic tunneling mechanisms. (C) 2015 AIP Publishing LLC.","doi":"10.1063/1.4929430","article-number":"082402","issn":"0003-6951","eissn":"1077-3118","researcherid-numbers":"Eom, Chang-Beom/I-5567-2014 Irvin, Patrick/E-2159-2012 Lee, Hyungwoo/H-9347-2018","orcid-numbers":"Irvin, Patrick/0000-0002-0248-2758 ","unique-id":"ISI:000360593900042","bibtex":"@article{ ISI:000360593900042,\nAuthor = {Bi, Feng and Huang, Mengchen and Lee, Hyungwoo and Eom, Chang-Beom and\n Irvin, Patrick and Levy, Jeremy},\nTitle = {{LaAlO3 thickness window for electronically controlled magnetism at\n LaAlO3/SrTiO3 heterointerfaces}},\nJournal = {{APPLIED PHYSICS LETTERS}},\nYear = {{2015}},\nVolume = {{107}},\nNumber = {{8}},\nMonth = {{AUG 24}},\nAbstract = {{Complex-oxide heterostructures exhibit rich physical behavior such as\n emergent conductivity, superconductivity, and magnetism that are\n intriguing for scientific reasons as well as for potential technological\n applications. It was recently discovered that in-plane magnetism at the\n LaAlO3/SrTiO3 (LAO/STO) interface can be electronically controlled at\n room temperature. Here, we employ magnetic force microscopy to\n investigate electronically controlled ferromagnetism at the LAO/STO\n interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c.\n Magnetic signatures are observed only within a thickness window 8 u.c.\n <= t <= 25 u.c. Within this window, the device capacitance corresponds\n well to the expected geometric value, while for thicknesses outside this\n window, the capacitance is strongly suppressed. The ability to modulate\n electronic and magnetic properties of LAO/STO devices depends on the\n ability to control carrier density, which is in turn constrained by\n intrinsic tunneling mechanisms. (C) 2015 AIP Publishing LLC.}},\nDOI = {{10.1063/1.4929430}},\nArticle-Number = {{082402}},\nISSN = {{0003-6951}},\nEISSN = {{1077-3118}},\nResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014\n Irvin, Patrick/E-2159-2012\n Lee, Hyungwoo/H-9347-2018}},\nORCID-Numbers = {{Irvin, Patrick/0000-0002-0248-2758\n }},\nUnique-ID = {{ISI:000360593900042}},\n}\n\n","author_short":["Bi, F.","Huang, M.","Lee, H.","Eom, C.","Irvin, P.","Levy, J."],"key":"ISI:000360593900042","id":"ISI:000360593900042","bibbaseid":"bi-huang-lee-eom-irvin-levy-laalo3thicknesswindowforelectronicallycontrolledmagnetismatlaalo3srtio3heterointerfaces-2015","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["laalo3","thickness","window","electronically","controlled","magnetism","laalo3","srtio3","heterointerfaces","bi","huang","lee","eom","irvin","levy"],"keywords":[],"authorIDs":[],"dataSources":["zArY7xMz8KdDswhhx"]}