@article{bianconi_-_1979,
	title = {Al- {Al}2O3 interface study using surface soft-x-ray absorption and photoemission spectroscopy},
	volume = {19},
	issn = {0163-1829},
	url = {http://dx.doi.org/10.1103/physrevb.19.2837},
	doi = {10.1103/physrevb.19.2837},
	abstract = {The local structure and the electronic states of a thin oxide layer on a single-crystal Al (111) surface has been studied using surface soft-x-ray absorption and soft-x-ray photoemission spectroscopy. Unoccupied interface states are found in the oxide band gap. The local structure of the thin oxide layer is compared with the structure of bulk Al 2 O 3 . The effect on the electronic states of an amorphous to crystalline phase transition is shown. The crystalline oxide-metal interface has fewer unoccupied interface states in the Al 2 O 3 gap than the amorphous oxide-metal interface.},
	number = {6},
	journal = {Physical Review B},
	author = {Bianconi, A. and Bachrach, R. Z. and Hagstrom, S. B. M. and Flodström, S. A.},
	month = mar,
	year = {1979},
	keywords = {al, interface, msr, stanford, xanes},
	pages = {2837--2843}
}

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