Electrical and optical properties of heavily Ge-doped AlGaN. Blasco, R, Ajay, A, Robin, E, Bougerol, C, Lorentz, K, Alves, L C, Mouton, I, Amichi, L, Grenier, A, & Monroy, E Journal of Physics D: Applied Physics, 52(12):125101, March, 2019.
Electrical and optical properties of heavily Ge-doped AlGaN [link]Paper  doi  bibtex   
@article{blasco_electrical_2019,
	title = {Electrical and optical properties of heavily {Ge}-doped {AlGaN}},
	volume = {52},
	issn = {0022-3727, 1361-6463},
	url = {https://iopscience.iop.org/article/10.1088/1361-6463/aafec2},
	doi = {10.1088/1361-6463/aafec2},
	language = {en},
	number = {12},
	urldate = {2023-05-18},
	journal = {Journal of Physics D: Applied Physics},
	author = {Blasco, R and Ajay, A and Robin, E and Bougerol, C and Lorentz, K and Alves, L C and Mouton, I and Amichi, L and Grenier, A and Monroy, E},
	month = mar,
	year = {2019},
	pages = {125101},
}

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