A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS

A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS. Borremans, J., Bevilacqua, A., Bronckers, S., Dehan, M., Kuijk, M., Wambacq, P., & Craninckx, J. Solid-State Circuits, IEEE Journal of, 43(12):2693-2705, Dec. , 2008.
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As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and 10 GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 nm digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of - 2dBm. The dual-band VCO achieves a phase noise of -122dBc/Hz and -128dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply.

@article{4684636,
  abstract = {As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and 10 GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 nm digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of - 2dBm. The dual-band VCO achieves a phase noise of -122dBc/Hz and -128dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply.},
  added-at = {2008-12-18T11:28:45.000+0100},
  author = {Borremans, J. and Bevilacqua, A. and Bronckers, S. and Dehan, M. and Kuijk, M. and Wambacq, P. and Craninckx, J.},
  biburl = {http://www.bibsonomy.org/bibtex/21fb4f6dd0a56ae4ec7ac04420de579f4/sdarfeuille},
  doi = {10.1109/JSSC.2008.2004865},
  interhash = {7bba14cf3d88291398268d0fe0cf4f06},
  intrahash = {1fb4f6dd0a56ae4ec7ac04420de579f4},
  issn = {0018-9200},
  journal = {Solid-State Circuits, IEEE Journal of},
  keywords = {imported},
  month = {Dec. },
  number = 12,
  pages = {2693-2705},
  timestamp = {2008-12-19T08:21:25.000+0100},
  title = {A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS},
  volume = 43,
  year = 2008
}

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