Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique. Boureau, V., Reboh, S., Benoit, D., Hÿtch, M., & Claverie, A. APL Materials, 7(4):041120, 2019.
bibtex   
@article{boureau_strain_2019,
	title = {Strain evolution of {SiGe}-on-insulator obtained by the {Ge}-condensation technique},
	volume = {7},
	number = {4},
	journal = {APL Materials},
	author = {Boureau, Victor and Reboh, Shay and Benoit, Daniel and Hÿtch, Martin and Claverie, Alain},
	year = {2019},
	pages = {041120},
}

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