MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED. Broxtermann, D., Sivis, M., Malindretos, J., & Rizzi, A. AIP Advances, 2(1):012108, March, 2012.
Paper doi bibtex @article{broxtermann_mbe_2012,
title = {{MBE} growth of high electron mobility {2DEGs} in {AlGaN}/{GaN} heterostructures controlled by {RHEED}},
volume = {2},
issn = {2158-3226},
url = {https://pubs.aip.org/aip/adv/article/21708},
doi = {10.1063/1.3679149},
language = {en},
number = {1},
urldate = {2023-05-19},
journal = {AIP Advances},
author = {Broxtermann, D. and Sivis, M. and Malindretos, J. and Rizzi, A.},
month = mar,
year = {2012},
keywords = {MBE},
pages = {012108},
}
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