An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling. Byun, G., Kim, Y., Kim, J., Tam, S., & Chang, M. F. J. Solid-State Circuits, 47(1):117-130, 2012.
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Paper bibtex @article{journals/jssc/ByunKKTC12,
added-at = {2012-01-16T00:00:00.000+0100},
author = {Byun, Gyungsu and Kim, Yanghyo and Kim, Jongsun and Tam, Sai-Wang and Chang, Mau-Chung Frank},
biburl = {http://www.bibsonomy.org/bibtex/22dfb51da00782fbac8bb71ec802ec30f/dblp},
ee = {http://dx.doi.org/10.1109/JSSC.2011.2164709},
interhash = {b64721b832bf288c16617732d0c80b2b},
intrahash = {2dfb51da00782fbac8bb71ec802ec30f},
journal = {J. Solid-State Circuits},
keywords = {dblp},
number = 1,
pages = {117-130},
timestamp = {2012-01-17T11:34:23.000+0100},
title = {An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#ByunKKTC12},
volume = 47,
year = 2012
}
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