An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling. Byun, G., Kim, Y., Kim, J., Tam, S., & Chang, M. F. J. Solid-State Circuits, 47(1):117-130, 2012.
An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling. [link]Link  An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling. [link]Paper  bibtex   
@article{journals/jssc/ByunKKTC12,
  added-at = {2012-01-16T00:00:00.000+0100},
  author = {Byun, Gyungsu and Kim, Yanghyo and Kim, Jongsun and Tam, Sai-Wang and Chang, Mau-Chung Frank},
  biburl = {http://www.bibsonomy.org/bibtex/22dfb51da00782fbac8bb71ec802ec30f/dblp},
  ee = {http://dx.doi.org/10.1109/JSSC.2011.2164709},
  interhash = {b64721b832bf288c16617732d0c80b2b},
  intrahash = {2dfb51da00782fbac8bb71ec802ec30f},
  journal = {J. Solid-State Circuits},
  keywords = {dblp},
  number = 1,
  pages = {117-130},
  timestamp = {2012-01-17T11:34:23.000+0100},
  title = {An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling.},
  url = {http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#ByunKKTC12},
  volume = 47,
  year = 2012
}

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