@article{cesca_ion_2006,
	title = {Ion beam analyses and electrical characterization of substitutional {Fe} properties in {Fe} implanted {InP}},
	volume = {249},
	issn = {0168-583X},
	url = {http://www.sciencedirect.com/science/article/B6TJN-4JXY3JB-H/2/9c0b04d0092265337ad72cacb023bd24},
	doi = {10.1016/j.nimb.2006.03.158},
	abstract = {We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.},
	number = {1-2},
	urldate = {2009-10-12TZ},
	journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
	author = {Cesca, T. and Verna, A. and Mattei, G. and Gasparotto, A. and Fraboni, B. and Impellizzeri, G. and Priolo, F.},
	month = aug,
	year = {2006},
	keywords = {InP, Lattice location, PIXE, ion implantation},
	pages = {894--896}
}

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