Mechanisms for the activation of ion-implanted Fe in InP. Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., & Priolo, F. Journal of Applied Physics, 100(2):023539--7, July, 2006.
Mechanisms for the activation of ion-implanted Fe in InP [link]Paper  doi  bibtex   
@article{cesca_mechanisms_2006,
	title = {Mechanisms for the activation of ion-implanted {Fe} in {InP}},
	volume = {100},
	url = {http://link.aip.org/link/?JAP/100/023539/1},
	doi = {10.1063/1.2220000},
	number = {2},
	urldate = {2010-01-15TZ},
	journal = {Journal of Applied Physics},
	author = {Cesca, T. and Verna, A. and Mattei, G. and Gasparotto, A. and Fraboni, B. and Impellizzeri, G. and Priolo, F.},
	month = jul,
	year = {2006},
	keywords = {III-V semiconductors, annealing, deep levels, doping profiles, indium compounds, ion implantation, iron, semiconductor doping},
	pages = {023539--7}
}
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