Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation. Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., Priolo, F., Tarricone, L., & Longo, M. AIP Conference Proceedings, 893(1):241--242, April, 2007.
Paper doi bibtex @article{ cesca_electrical_2007,
title = {Electrical {Activation} {Of} {Fe} {Impurities} {Introduced} {In} {III}-{V} {Semiconductors} {By} {High} {Temperature} {Ion} {Implantation}},
volume = {893},
url = {http://link.aip.org/link/?APC/893/241/1},
doi = {10.1063/1.2729858},
number = {1},
urldate = {2010-01-15TZ},
journal = {AIP Conference Proceedings},
author = {Cesca, T. and Verna, A. and Mattei, G. and Gasparotto, A. and Fraboni, B. and Impellizzeri, G. and Priolo, F. and Tarricone, L. and Longo, M.},
collaborator = {Jantsch, Wolfgang and Schaffler, Friedrich},
month = {April},
year = {2007},
keywords = {III-V semiconductors, deep levels, high-temperature techniques, impurity states, indium compounds, ion implantation, iron, phosphorus compounds, semiconductor doping},
pages = {241--242}
}
Downloads: 0
{"_id":"W6GpiDBSLSWmLrBQu","authorIDs":["545e06fc6aaec20d2300073d"],"author_short":["Cesca, T.","Verna, A.","Mattei, G.","Gasparotto, A.","Fraboni, B.","Impellizzeri, G.","Priolo, F.","Tarricone, L.","Longo, M."],"bibbaseid":"cesca-verna-mattei-gasparotto-fraboni-impellizzeri-priolo-tarricone-longo-electricalactivationoffeimpuritiesintroducediniiivsemiconductorsbyhightemperatureionimplantation-2007","bibdata":{"author":["Cesca, T.","Verna, A.","Mattei, G.","Gasparotto, A.","Fraboni, B.","Impellizzeri, G.","Priolo, F.","Tarricone, L.","Longo, M."],"author_short":["Cesca, T.","Verna, A.","Mattei, G.","Gasparotto, A.","Fraboni, B.","Impellizzeri, G.","Priolo, F.","Tarricone, L.","Longo, M."],"bibtex":"@article{ cesca_electrical_2007,\n title = {Electrical {Activation} {Of} {Fe} {Impurities} {Introduced} {In} {III}-{V} {Semiconductors} {By} {High} {Temperature} {Ion} {Implantation}},\n volume = {893},\n url = {http://link.aip.org/link/?APC/893/241/1},\n doi = {10.1063/1.2729858},\n number = {1},\n urldate = {2010-01-15TZ},\n journal = {AIP Conference Proceedings},\n author = {Cesca, T. and Verna, A. and Mattei, G. and Gasparotto, A. and Fraboni, B. and Impellizzeri, G. and Priolo, F. and Tarricone, L. and Longo, M.},\n collaborator = {Jantsch, Wolfgang and Schaffler, Friedrich},\n month = {April},\n year = {2007},\n keywords = {III-V semiconductors, deep levels, high-temperature techniques, impurity states, indium compounds, ion implantation, iron, phosphorus compounds, semiconductor doping},\n pages = {241--242}\n}","bibtype":"article","collaborator":"Jantsch, Wolfgang and Schaffler, Friedrich","doi":"10.1063/1.2729858","id":"cesca_electrical_2007","journal":"AIP Conference Proceedings","key":"cesca_electrical_2007","keywords":"III-V semiconductors, deep levels, high-temperature techniques, impurity states, indium compounds, ion implantation, iron, phosphorus compounds, semiconductor doping","month":"April","number":"1","pages":"241--242","title":"Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation","type":"article","url":"http://link.aip.org/link/?APC/893/241/1","urldate":"2010-01-15TZ","volume":"893","year":"2007","bibbaseid":"cesca-verna-mattei-gasparotto-fraboni-impellizzeri-priolo-tarricone-longo-electricalactivationoffeimpuritiesintroducediniiivsemiconductorsbyhightemperatureionimplantation-2007","role":"author","urls":{"Paper":"http://link.aip.org/link/?APC/893/241/1"},"keyword":["III-V semiconductors","deep levels","high-temperature techniques","impurity states","indium compounds","ion implantation","iron","phosphorus compounds","semiconductor doping"],"downloads":0},"bibtype":"article","biburl":"https://api.zotero.org/users/454272/collections/NTZ99U7Z/items?key=NPTHDmrHX0oRD8Xt70Zcpigt&format=bibtex&limit=100","creationDate":"2014-10-19T15:58:29.557Z","downloads":0,"keywords":["iii-v semiconductors","deep levels","high-temperature techniques","impurity states","indium compounds","ion implantation","iron","phosphorus compounds","semiconductor doping"],"search_terms":["electrical","activation","impurities","introduced","iii","semiconductors","high","temperature","ion","implantation","cesca","verna","mattei","gasparotto","fraboni","impellizzeri","priolo","tarricone","longo"],"title":"Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation","year":2007,"dataSources":["uTZecztqDmhDTQDda"]}