Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation. Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., Priolo, F., Tarricone, L., & Longo, M. AIP Conference Proceedings, 893(1):241--242, April, 2007.
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation [link]Paper  doi  bibtex   
@article{ cesca_electrical_2007,
  title = {Electrical {Activation} {Of} {Fe} {Impurities} {Introduced} {In} {III}-{V} {Semiconductors} {By} {High} {Temperature} {Ion} {Implantation}},
  volume = {893},
  url = {http://link.aip.org/link/?APC/893/241/1},
  doi = {10.1063/1.2729858},
  number = {1},
  urldate = {2010-01-15TZ},
  journal = {AIP Conference Proceedings},
  author = {Cesca, T. and Verna, A. and Mattei, G. and Gasparotto, A. and Fraboni, B. and Impellizzeri, G. and Priolo, F. and Tarricone, L. and Longo, M.},
  collaborator = {Jantsch, Wolfgang and Schaffler, Friedrich},
  month = {April},
  year = {2007},
  keywords = {III-V semiconductors, deep levels, high-temperature techniques, impurity states, indium compounds, ion implantation, iron, phosphorus compounds, semiconductor doping},
  pages = {241--242}
}

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