Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation. Chao Lu, Pham, A., -., H., & Livezey, D. IEEE Transactions on Microwave Theory and Techniques, 54(1):40-45, 1, 2006.
abstract   bibtex   
We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.
@article{
 title = {Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation},
 type = {article},
 year = {2006},
 identifiers = {[object Object]},
 keywords = {MMIC phase shifters;UHF phase shifters;UHF integra},
 pages = {40-45},
 volume = {54},
 month = {1},
 id = {0b59d640-7cf5-3d43-a8cc-1772e5038bee},
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 abstract = {We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.},
 bibtype = {article},
 author = {Chao Lu, undefined and Pham, A -. H and Livezey, D},
 journal = {IEEE Transactions on Microwave Theory and Techniques},
 number = {1}
}
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